The enhancement of a hydrogen plasma treatment on the solid-phase crystallization of hydrogenated amorphous silicon has been applied to form single crystalline silicon islands at designed locations. Holes with diameters from 0.4 to 1.8 mm were opened in silicon nitride, and then amorphous silicon films within the holes were exposed to a hydrogen plasma to create microcrystalline seeds. After fu...

The behavior of C(60) molecules deposited onto 11-phenoxyundecanethiol (phenoxy) self-assembled monolayers (SAMs) is studied using ultrahigh vacuum scanning tunneling microscopy (UHV-STM) and spectroscopy. We observe that after thermally annealing between 350 and 400 K in vacuum a combination of hexagonally close-packed islands, rectangularly packed islands, and isolated single lines of C(60) i...

CeO2 films were irradiated with 200 MeV Au ions in order to investigate the damages created by electronic energy deposition. In the Raman spectra of the ion-irradiated films, a broad band appears at the higher frequency side of the F2g peak of CeO2. The band intensity increases as ion fluence increases. Furthermore, the F2g peak becomes asymmetric with a low frequency tail. In order to understa...

In this research, n-dodecylthiol was added to P3HT/ PC70BM polymer solar cells to improve the crystallinity of P3HT and enhance the phase separation of P3HT/PC70BM. The improved crystallinity of P3HT:PC70BM doped with 0-5% by volume of ndodecylthiol resulted in improving the power conversion efficiency of polymer solar cells by 33%. In addition, thermal annealing of the P3HT/PC70MB/n-dodecylthi...

Adsorption structures formed upon vapor deposition of the natural amino acid L-cysteine onto the (111) surface of gold have been investigated by scanning tunneling microscopy under ultrahigh vacuum conditions. Following deposition at room temperature and at cysteine coverages well below saturation of the first monolayer, we found coexistence of unordered molecular islands and extended domains o...

Invar36 thin films with various thicknesses from 200 Åto 1400Åare deposited on glass substrates by DC magnetron sputtering technique. After deposition, the samples are annealed in vacuum ambient (10−5mbar) upto 500◦C. Electrical properties of as-deposited as well as annealed films are analyzed with respect to thickness and annealing temperature. In situ measurement of sheet resistance of films ...

The authors study the use of thin ( 230 nm) tantalum (Ta) layers on silicon (Si) as a low emissivity (high reflectivity) coating for high-temperature Si devices. Such coatings are critical to reduce parasitic radiation loss, which is one of the dominant loss mechanisms at high temperatures (above 700 C). The key factors to achieve such a coating are low emissivity in the near infrared and super...

We have developed a novel technique based on the selective desorption of an oxide film in order to grow ordered arrays of silicon carbide nanocrystals on a silicon surface. These nanocrystals form as a byproduct of void nucleation in the oxide during the high-temperature vacuum annealing of silicon, a process which normally produces a random distribution of nanocrystals across the silicon surfa...

Room-temperature Ba deposition on an oxygen-terminated theta-Al(2)O(3)/NiAl(100) ultrathin film substrate under ultrahigh vacuum (UHV) conditions is studied using X-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES) and temperature programmed desorption (TPD) techniques. In addition, Ba oxidation by the ions of the alumina substrate at 300 K < T < 1200 K in the absence of a...

Obliquely deposited thin films of ternary Ag–Ge–S glasses are characterized in this work. Thin films are fabricated in a vacuum thermal evaporator at different evaporation angles and examined by Raman spectroscopy. The Raman mode frequency of GeS4 corner-sharing (CS) structure of the as-deposited films display a red-shift as a function of Ag content due to reduced global connectivity, and there...