The present paper describes the recent developments in the device engineering for microelectronics and nanoelectronics. The perspectives for the future show a narrow margin in silicon technology. Hence Engineering in Devices and materials becomes a must. The investigation carried out illustrates the various materials technology that can lengthen the silicon technology lifetime and eventually br...

Articles you may be interested in Increase of mobility in dual gate amorphous-InGaZnO4 thin-film transistors by pseudo-doping Appl. Effect of hydrogen incorporation on the negative bias illumination stress instability in amorphous In-Ga-Zn-O thin-film-transistors Suppress temperature instability of InGaZnO thin film transistors by N2O plasma treatment, including thermal-induced hole trapping ph...

The shrinking MOSFET has an increasing subthreshold leakage current caused by various mechanisms. For example, the band-to-band tunneling (BTBT) current from drain to channel results in a large subthreshold leakage current in a 50nm MOSFET [1]. Recently, the double-gate (DG) fully depleted (FD) MOS was investigated. In the DG-MOS, the channel region is intrinsic or lightly doped silicon so that...

High leakage currents and short channel effects become significant enough to be the major concerns for circuit designers as semiconductor devices are miniaturized. Tunnel field effect transistor(TFET) show good scalability and have very low leakage current .These transistors have very low leakage current, good sub-threshold swing, improved short channel characteristics and lesser temperature se...

This paper focuses a hetero gate material dielectric DG TFET with low band gap source material, which offers high / on off I I ratio, sub 60mV/dec subthreshold swing along with significant improvement in on current. Here analytical model for 2D electric field is derived from Poisson’s equation and is used to determine the subthreshold swing, transconductance, output conductance, gate threshold ...

UNLABELLED BACKGROUND Thyroidectomy is a common surgical procedure, after which drains are placed routinely. This study aims to assess the benefits of placing postoperative drains, its complications and affects on postoperative stay, in thyroid lobectomy. METHODOLOGY Randomized Clinical Trial of 60 goitre patients undergoing lobectomy was conducted at Civil Hospital Karachi, during July'11...

Dear Editors, Recently in your journal an interesting trick in steri-strips application was suggested by D’Ettorre et al. (1), we would like to draw the readers’ attention to a further potential use of this common dressing. In fact, suction drains are usually secured by looping suture material around the drain in the form of a ‘Roman garter’. However, the knot is prone to loosening, which allow...

The Sun serves as a natural reference for the modelling of various physical processes at work in stellar interiors. Helioseismology results, which inform us on characterization interior (such as, example, helium abundance its envelope), are, however, odds with heavy element abundances. Moreover, solar internal rotation and surface lithium have always been challenging to explain. We present resu...

Nitride semiconductors have emerged as a strong candidate for high power, high temperature and high frequency applications in the recent years [13]. The motivation for using this material system is clearly illustrated in Figure 1 below. It is important to emphasize that the strongest feature of the III-V materials is the heterostructure technology it can support quantum well, modulation-doped h...