نتایج جستجو برای: asymmetric wedged field output factor

تعداد نتایج: 1812658  

Linear AC power supplies can be replaced by their nonlinear switching counterparts due to the lower voltage drops and higher efficiency and power density of switching-mode inverters. Multilevel cascaded H-bridge (CHB) converters are the preferred inverter structure because of modular configuration, control, and protection. The output voltage quality in CHB converters depends on the number of ou...

2011
Huiqi Ye Changcheng Hu Gang Wang Hongming Zhao Haitao Tian Xiuwen Zhang Wenxin Wang Baoli Liu

The in-plane spin splitting of conduction-band electron has been investigated in an asymmetric (001) GaAs/AlxGa1-xAs quantum well by time-resolved Kerr rotation technique under a transverse magnetic field. The distinctive anisotropy of the spin splitting was observed while the temperature is below approximately 200 K. This anisotropy emerges from the combined effect of Dresselhaus spin-orbit co...

Journal: :Optics letters 2005
Robert R McLeod Tokuyuki Honda

Compact spectrometers fabricated by placing a wedged etalon or a linear variable filter in front of a linear photodiode array typically do not exhibit the spectral resolution of a parallel filter of the same finesse. A theoretical analysis of the beam emerging from a wedged etalon is shown to predict a comalike aberration, explaining the loss in resolution. This analysis also predicts a focused...

Journal: :Neuron 2005
Anjen Chenn

Asymmetric cell division plays a major role in the generation of cell diversity during development. In this issue of Neuron, Sun and colleagues present evidence that the epidermal growth factor receptor is asymmetrically distributed in mitotic cerebral cortical precursors, and the resulting unequal inheritance generates offspring with different responsiveness to growth factor and unique cell fa...

2017
Ke Han Guohui Qiao Zhongliang Deng Yannan Zhang

Among multi-gate field effect transistor (FET) structures, FinFET has better short channel control and ease of manufacturability when compared to other conventional bulk devices. The radio frequency (RF) performance of FinFET is affected by gate-controlled parameters such as transconductance, output conductance, and total gate capacitance. In recent years, high-k spacer dielectric materials for...

Journal: :iranian journal of radiation research 0
a. iftikhar cenar cancer hospital, bmc complex, brewery road, po box 17, quetta pakistan

background: the aim of this work was to study the output factors for linac using different ionization chambers and build up caps. materials and methods: output factors were measured for open square fields (3 × 3 cm to 40 × 40 cm) defined by collimator jaws for 6 and 15 mv photon beams from a varian clinac 2100c accelerator were measured. the measurements in air were performed using compact cyli...

1999
D. C. Quimby S. C. Gottschalk D. R. Jander T. E. DeHart K. E. Robinson

The U9/SRRC undulator has recently been completed by STI Optronics, Inc. (STI) for use at the Synchrotron Radiation Research Center (SRRC) in Hsinchu, Taiwan, R.O.C. This 4.5-m long, 90-mm period wedged-pole hybrid undulator builds on several aspects of previous STI designs [1] while including a number of significant enhancements. The magnetics are based on the wedged-pole geometry [2] with add...

Jafar Fatahi Asl Marziyeh Tahmasbi Mohammad Javad Tahmasebi Birgani Mohammad.Ali Behrooz Nahid Chegeni Raziye Fayazi

Introduction: Accurate calculation of equal square field size is important in radiation therapy and A factor, in the Vadash formula must be determine by considering collimator exchange effect. Therefore, the purpose of this study was to determine the best A factor, for calculation of equal square field size in treatment planning   Materials and Methods: A new...

Journal: :Silicon 2021

In this paper, we have proposed a 2D analytical model for Asymmetric gate stack triple metal MOSFET(AGSTMGAAFET) and performed comparative analysis with the simulation results obtained using SILVACO 3D software. Existing devices such as all around single (SMGAAFET), (TMGAAFET), (GSSMGAAFET), (GSTMGAAFET) asymmetric (AGSTMGAAFET) been compared our structure AGSTMGAAFET. Our device provides excel...

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