We report controlled laminar growth of a crystalline transition metal oxide on Si 001 without SiOx or silicide formation by utilizing the chalcogenide semiconductor gallium sesquiselenide Ga2Se3 as a nonreactive buffer layer. Initial nucleation of both pure and Co-doped anatase TiO2 is along Ga2Se3 nanowire structures, coalescing to a flat, multidomain film within two molecular layers. Arsenic-...

Optical burst switching (OBS) is a promising candidate for a more dynamic optical layer in the context of IP over WDM. Although buffering is not mandatory for the functionality of OBS, even simple FDL buffers can improve burst loss probability. In this paper, we first discuss principal buffer architectures and reservation schemes for fiber delay line (FDL) buffers. Then, we investigate key desi...

To synthesize vertically aligned carbon nanotube (VA-CNT) arrays longer than a millimeter using chemical vapor deposition (CVD), aluminum oxide buffer has to be deposited on supporting substrates to prevent diffusion and aggregation of catalyst nanoparticles. Currently, reliable deposition has to be made using expensive and time-consuming e-beam evaporation or thermal sputtering. Here, we repor...

The possibility of magnetic anisotropy engineering of ultrathin Co films in the scale of several dozen nanometers is investigated by magnetooptical magnetometry. In Au/Co/Au sandwiches the spin reorientation transition from the out-of-plane to the in-plane configuration is observed, when Co layer thickness exceeds 1.9 nm. Molybdenum as the underlayer suppresses the Co thickness range for which ...

In mountainous areas such as the southern Appalachians USA, riparian zones are difficult to define. Vegetation is a commonly used riparian indicator and plays a key role in protecting water resources, but adequate knowledge of floristic responses to riparian disturbances is lacking. Our objective was to quantify changes in stand-level floristic diversity of riparian plant communities before (20...

Chemical deposition methods like MOD and MOCVD are promising approaches for coated conductors (CCs) due to their reduced cost and easy scaling. High quality La2Zr2O7 (LZO) buffer layers were prepared by MOD on Ni-5%at.W (NiW) RABiTS and subsequent YBCO layers (450 to 800 nm thick) were deposited by pulsed injection MOCVD, leading to a simple low cost architecture NiWRABiTS/LZOMOD/YBCOMOCVD. In ...

Vertical GaN-on-Si devices are promising for the next-generation high-voltage power electronics with low cost and high efficiency. However, their applications impeded by limited thickness of crack-free GaN layers threading dislocation density (TDD) in layer. Buffer crucial stress control while they usually behave poor surface morphology, which causes early relaxation thickness. Hereby, a terrac...