نتایج جستجو برای: carrier pressure

تعداد نتایج: 478038  

Journal: :Reviews of modern plasma physics 2021

Abstract The atmospheric pressure low-temperature homogeneous discharge using helium and nitrogen, both known for industrial applications, was reviewed. In case of helium, metastable atoms (2 1 s 2 3 s) produced in the glow were able to dissociate mixed molecular gases produce radicals or atoms. Radical species undergo chemical reactions, such as oxidation nitration reaction form products on el...

2016
Ryo Kato Keisuke Yoshimasa Tatsuya Egashira Takahiro Oya Kenichi Oyaizu Hiroyuki Nishide

Finding a safe and efficient carrier of hydrogen is a major challenge. Recently, hydrogenated organic compounds have been studied as hydrogen storage materials because of their ability to stably and reversibly store hydrogen by forming chemical bonds; however, these compounds often suffer from safety issues and are usually hydrogenated with hydrogen at high pressure and/or temperature. Here we ...

Journal: :Journal of chromatographic science 2002
J Krupcík I Spánik E Benická M Zabka T Welsch D W Armstrong

The enantioselective tuning of two columns coupled in series is investigated in chiral high-resolution gas chromatography. Two columns with opposite enantioselectivities (Chirasil-L-Val and Chirasil-D-Val) are coupled in series via a T connector, and the relative retention of enantiomers chromatographed on the system is changed by varying the individual carrier gas flow rates in the coupled col...

2016
C. Mauclair A. Mermillod-Blondin R. Stoian Benoit Lauras

We discuss the dynamics of ultrashort pulsed laser excitation in bulk optical silica-based glasses (fused silica and borosilicate BK7) well-above the permanent modification threshold. We indicate subsequent structural and thermomechanical energy relaxation paths that translate into positive and negative refractive index changes, compression and rarefaction zones. If fast electronic decay occurs...

2008
J. Chamings A. R. Adams S. J. Sweeney B. Kunert K. Volz W. Stolz

We report on the properties of GaNAsP/GaP lasers which offer a potential route to producing lasers monolithically on silicon. Lasing has been observed over a wide temperature range with pulsed threshold current density of 2.5 kA /cm2 at 80 K =890 nm . Temperature dependence measurements show that the radiative component of the threshold is relatively temperature stable while the overall thresho...

2012
M. K. I. Senevirathna S. Gamage R. Atalay A. R. Acharya A. G. U. Perera N. Dietz M. Buegler A. Hoffmann

The influence of super-atmospheric reactor pressures (2.5-18.5 bar) on the electrical and structural properties of InN epilayers deposited on GaN/sapphire (0001) templates by high-pressure Chemical Vapor Deposition has been studied. The epilayers were analyzed by Raman, x-ray diffraction (XRD), and Fourier transform infrared reflectance spectrometry to determine the structural properties as wel...

2009
Kow-Ming Chang Shih-Syuan Huang Je-Uai Lin Chih-Hsiang Lin

Low operation voltage organic thin film transistors (OTFTs) were successfully fabricated with top contact structure at low fabrication temperature. The thin gate dielectric of OTFTs were deposited by atmospheric pressure plasma jet at the substrate temperature about 150 °C and under atmospheric pressure. The environment of processes would significantly improve the abilities of large area applic...

Journal: :Blood cells, molecules & diseases 2004
Deborah Rund Dvora Filon Naomi Jackson Nava Asher Varda Oron-Karni Tomasz Sacha Sylwia Czekalska Ariella Oppenheim

alpha-Thalassemia is among the world's most common single gene disorders, which is most prevalent in the malaria belt. This geographic distribution has been attributed to a selective advantage of heterozygotes against this disease. Unexpectedly, we have found a high frequency of heterozygosity for deletional alpha-thalassemia (-alpha3.7) in Ashkenazi Jews (carrier frequency of 7.9%, allele freq...

Journal: :Optics express 2011
Siddharth Tallur Suresh Sridaran Sunil A Bhave

Cavity opto-mechanics enabled radiation pressure (RP) driven oscillators shown in the past offer an all optical Radio Frequency (RF) source without the need for external electrical feedback. However these oscillators require external tapered fiber or prism coupling and non-standard fabrication processes. In this work, we present a CMOS compatible fabrication process to design high optical quali...

2016
Filippo Giubileo Antonio Di Bartolomeo Nadia Martucciello Francesco Romeo Laura Iemmo Paola Romano Maurizio Passacantando

We studied the effects of low-energy electron beam irradiation up to 10 keV on graphene-based field effect transistors. We fabricated metallic bilayer electrodes to contact mono- and bi-layer graphene flakes on SiO₂, obtaining specific contact resistivity ρ c ≈ 19 k Ω · µ m 2 and carrier mobility as high as 4000 cm²·V-1·s-1. By using a highly doped p-Si/SiO₂ substrate as the back gate, we analy...

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