*Correspondence: Andrew Michelmore, Mawson Institute, Building V, Mawson Lakes Campus, University of South Australia, Mawson Lakes, 5095, SA, Australia e-mail: andrew.michelmore@ unisa.edu.au Plasma enhanced chemical vapor deposition (PECVD) can be used to fabricate surfaces with a wide range of physical and chemical properties and are used in a variety of applications. Despite this, the mechan...

At the beginning of the seventies, a break-through took place in the telecommunication research. The introduction of Chemical Vapour Deposition technology in the manufacture of optical fibres allowed both technical quality and economical convenience to realise optical networks, thus beginning the telecommunication revolution. Since that moment, a great development of the CVD techniques has been...

Four thin-film adhesion characterization methods are proposed. Two of them are surface acoustic wave based and the two others emphasize the complementary nature between acoustic microscopy, scratch test and tensile experiments. A continuous wave scanning acoustic microscope was used to propagate surface modes in the specimen and to measure the surface acoustic wave velocity as a function of the...

This investigation consisted of two parts. In part one, a High Rate Physical Vapor Deposition Process was developed for the deposition of metals, alloys, compounds and dispersion strengthened alloys. The relationship between the deposition temperature, the microstructure and the mechanical properties was studied. The materials resulting from this process were shown to have oroperties very simil...

diamond like carbon (dlc) film was grown by hot filament chemical vapor deposition (hfcvd)technique. in the present work, we investigated the quality of the dlc films groew on the substratesthat were coated with various metal nanocatalysts (au and ni). a combination of ch4/ar/h2 rendersthe growth of carbon nanostructures technique (diamond like carbon). the utilized samples werecharacterized by...

Plasma Enhanced Chemical Vapour Deposition (PECVD) is one of the main plasma processes which induce charging damage to gate oxides during the VLSI processes. All the previous studies, however, describe the charging phenomena only at the beginning of PECVD process, when a very thin oxide layer covers the metal lines. We present and analyze in this paper, a new strong charging phenomenon in the e...

When prepared by conventional evaporation or sputtering, thin films of amorphous silicon contain a large concentration of defects and microvoids.3,4 These give rise to localized states in the energy gap of the material.3,4 Plasma-enhanced chemical vapor deposition (PECVD), using silicon hydrides, significantly reduces the number of defects and thereby lowers the concentration of localized state...

Conditions for Reciprocal CVD Figure S1. Conditions used for graphene growth. (a) Temperature profile and flow parameters during the growth of epitaxial multilayer or poly-crystalline bilayer graphene. (b) Table listing the growth conditions used to prepare the graphene/h-BN heterostructure and the multilayer graphene.

Two different techniques for the electronic surface passivation of silicon solar cells, the plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of thin thermal silicon oxide/plasma SiN stack structures, are investigated. It is demonstrated that, despite their low thermal budget, both techniques are capable of giving an outstanding surface passivation quality ...

Low refractive index Silicon Oxynitride (SiON) layers were deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) using SiH4/N2 and N2O. At an index less than 1.473 the as-deposited layers appeared to be unstable in time and sensitive to moisture as could be observed by a spectroscopic ellipsometer. The stability, probably due to partly open structures, could be improved by deposition a...