Abstarct---This paper proposes a new design of highly stable and low power SRAM cell using carbon nanotube FETs (CNTFETs) at 32nm technology node. As device physical gate length is reduced to below 65 nm, device non-idealities such as large parameter variations and exponential increase in leakage current make the I-V characteristics substantially different from traditional MOSFETs and become a ...

Differential Cascode Voltage Switch (DCVS) is a well-known logic style, which constructs robust and reliable circuits. Two main strategies are studied in this paper to form static DCVS-based standard ternary fundamental logic components in digital electronics. While one of the strategies leads to fewer transistors, the other one has higher noise margin. New designs are simulated with HSPICE and...

The performance limits of carbon nanotube field-effect transistors ~CNTFETs! are examined theoretically by extending a one-dimensional treatment used for silicon metal–oxide– semiconductor field-effect transistors ~MOSFETs!. Compared to ballistic MOSFETs, ballistic CNTFETs show similar I – V characteristics but the channel conductance is quantized. For low-voltage, digital applications, the CNT...

The performance of a semiconducting carbon nanotube (CNT) is assessed and tabulated for parameters against those of a metal-oxide-semiconductor field-effect transistor (MOSFET). Both CNT and MOSFET models considered agree well with the trends in the available experimental data. The results obtained show that nanotubes can significantly reduce the drain-induced barrier lowering effect and subthr...

Carbon nanotube field effect transistors (CNTFETs) have been considered as one of the potential candidates for nanoelectronics beyond Si CMOS. However, it is not easy to have high performance CNTFETs with high yield currently. In this work, we proposed a local bottom-gate (LBG) CNTFETs combined with a novel device concept and optimized process technologies. High performance of CNTFET with low s...

The p-i-n carbon nanotube (CNT) devices suffer from low ON/OFF current ratio and small saturation current. In this paper by band bending engineering, we improved the device performance of p-i-n CNT field effect transistors (CNTFET). A triple gate all around structure is proposed to manage the carrier transport along the channel. We called this structure multi-segment gate (MSG) CNTFET. Band to ...

Due to the scaling of CMOS, limitations these devices raised need for alternative nano-devices. Various are proposed like FinFET, TFET, CNTFET. Among these, FinFET emerges as one promising which can replace CMOS due its low leakage in nanometer regime. The electronics nowadays more compact and efficient terms battery consumption. SRAMs have been replaced by CMOS. Two SRAM cells power having hig...