For organic semiconductors to find ubiquitous electronics applications, the development of new materials with high mobility and air stability is critical. Despite the versatility of carbon, exploratory chemical synthesis in the vast chemical space can be hindered by synthetic and characterization difficulties. Here we show that in silico screening of novel derivatives of the dinaphtho[2,3-b:2',...

High-performance inversion-type enhancementmode n-channel In0.53Ga0.47As MOSFETs with atomiclayer-deposited (ALD) Al2O3 as gate dielectric are demonstrated. The ALD process on III–V compound semiconductors enables the formation of high-quality gate oxides and unpinning of Fermi level on compound semiconductors in general. A 0.5-μm gate-length MOSFET with an Al2O3 gate oxide thickness of 8 nm sh...

State-of-the-art techniques for the fabrication of compound semiconductors are mostly vacuum-based physical vapor or chemical vapor deposition processes. These vacuum-based techniques typically operate at high temperatures and normally require higher capital costs. Solution-based techniques offer opportunities to fabricate compound semiconductors at lower temperatures and lower capital costs. A...

The influence of precursor structure and reactivity on properties of compound semiconductors grown by metalorganic chemical vapor deposition (MOCVD) is discussed and illustrated with examples for growth of GaAs, ZnSe, and A1,Gal-,N. Gas-phase and surface reactions of organometallic arsenic compounds provide understanding of variation in carbon incorporation levels with precursor structure. Surf...