The lack of large-area single-crystal diamond wafers has led us to downscale diamond electronic devices. Here, we design and fabricate a hydrogenated diamond (H-diamond) triple-gate metal-oxide-semiconductor field-effect transistor (MOSFET) to extend device downscaling and increase device output current. The device's electrical properties are compared with those of planar-type MOSFETs, which ar...

The thermal conductance of interfaces between metals and diamond, which has a comparatively high Debye temperature, is often greater than can be accounted for by two-phonon processes. The high pressures achievable in a diamond anvil cell (DAC) can significantly extend the metal phonon density of states to higher frequencies, and can also suppress extrinsic effects by greatly stiffening interfac...

conditional  methods  of adjustment  are often used to quantify  the effect  of the exposure on the outcome.  as  a  result,  the  stratums-specific  risk  ratio  estimates  are  reported  in  the  presence  of interaction   between   exposure  and  confounder(s)   in  the  literature,  even  if  the  target  of  the intervention on the exposure is the total population and the interaction itsel...

Recent advances in the fabrication and characterization of semiconductor and metallic nanowires are meeting the high expectations of nanotechnolgists. Although diamond has remarkable electronic and chemical properties, development of diamond nanowires has been slow, while the development of carbon nanotube-based technologies continues at a furious pace. Recently, the theoretical and experimenta...

High-power operation of AlGaN/GaN high-electronmobility transistors (HEMTs) requires efficient heat removal through the substrate. GaN composite substrates, including the high-thermal-conductivity diamond, are promising, but high thermal resistances at the interfaces between the GaN and diamond can offset the benefit of a diamond substrate. We report on measurements of thermal resistances at Ga...

Marshall Stoneham London Centre for Nanotechnology and Department of Physics and Astronomy, University College London, 17–19 Gordon Street, London WC1H 0AH, UK Natural diamond has been valued for its appearance and mechanical properties for at least two thousand years. As a gem stone diamond is unsurpassed. However, scientific work, especially in the last 20 years, has demonstrated that diamond...

OBJECTIVES Asbestos is associated with South African diamond mines due to the nature of kimberlite and the location of the diamond mines in relation to asbestos deposits. Very little is known about the health risks in the diamond mining industry. The objective of this study was to explore the possibility of asbestos exposure during the process of diamond mining. METHODS Scanning electron micr...

Diamond Blackfan anemia (DBA) is an inherited erythroblastopenia associated with mutations in at least 8 different ribosomal protein genes. Mutations in the gene encoding ribosomal protein S19 (RPS19) have been identified in approximately 25% of DBA families. Most of these mutations disrupt either the translation or stability of the RPS19 protein and are predicted to cause DBA by haploinsuffici...

The phase diagram of model anisotropic particles with four attractive patches in a tetrahedral arrangement has been computed at two different values of the range of the potential, with the aim of investigating the conditions under which a diamond crystal can be formed. We find that the diamond phase is never stable for our longer-ranged potential. At low temperatures and pressures, the fluid fr...

Recent improvements in growth methodologies have decreased the grain sizes and thicknesses of polycrystalline diamond films to the nanometer range, while also increasing the film uniformity and growth rate and preserving the outstanding mechanical properties of diamond. This is rendering such films more technologically and commercially viable. Ultrananocrystalline diamond (UNCD) are the thinnes...