Deposition rates, wet etch rates, and thickness uniformity experiments were performed using O3/TEOS thermal chemical-vapor deposition. Our results for oxide deposition show optimum process window around 200 Torr for producing films of good quality ~uniformity and material properties!. This is in excellent agreement with the modeling predictions over a broad range of pressure ~100–600 Torr! and ...

Phase Transitions and High-Voltage Electrochemical Behavior of LiCoO2 Thin Films Grown by Pulsed Laser Deposition H. Xia, L. Lu, Y. S. Meng, and G. Ceder* Advanced Materials for Microand Nano-System, Singapore-MIT Alliance, Singapore 117576 Department of Mechanical Engineering, National University of Singapore, Singapore 117576 Department of Materials Science and Engineering, Massachusetts Inst...

We present a comparison of models describing the pyrolytic deposition of SiO2 with a low pressure chemical vapor deposition process. In order to meet industrial simulation requirements, e.g. accuracy and fast delivery of results, we present an overview of established and new models, their use within TCAD applications, and their best results which have been obtained by calibrations according to ...

3 Preface 4 List of publications 5 List of symbols and abbreviations 6

The wide application of graphene in the industry requires direct growth films on silicon substrates. In this study, we found a possible technique to meet requirement above. Multilayer thin (MLG) were grown without catalyst Si/SiO2 using pulsed laser deposition (PLD). It was that minimum number pulses required produce fully covered (uninterrupted) samples is 500. This resulted contain ~5 layers ...

For wafer sizes in state-of-the-art semiconductor manufacturing ranging up to 300 mm, the uniformity of processes across the wafer becomes a very important issue. We present a fully three-dimensional model for the feature scale simulation of continuum transport and reaction determined high-pressure chemical vapor deposition processes suitable for the investigation of such nonuniformities. The n...