We consider electromagnetic emission from a Josephson junction (JJ) in a resistive state in an external magnetic field and derive the radiation power from the dielectric layer inside a JJ directly into outside dielectric media. Matching the electric and magnetic fields at the JJ edges, we find dynamic boundary conditions for the phase difference in JJ. We find that the fraction of the power tra...

Dielectrics are essential components in modern electronics and electric systems. When a sufficiently high voltage is applied on a layer of a dielectric, the dielectric will breakdown electrically. The breakdown limits the electrical energy density of the dielectric. We show that constraining the deformation of soft dielectrics can greatly enhance their breakdown electric fields and thus increas...

Metal sulfide dielectric thin films have been deposited using dynamic wet chemistry processing on silver coated hollow glass waveguides (HGWs). The sulfides used were cadmium sulfide (CdS) and lead sulfide (PbS); both films have excellent infrared transparency and high refractive index contrast. The thickness of these thin films can be tailored to minimize the attenuation of the HGW over specif...

Maxwell equations are solved in a layer comprising a finite number of homogeneous isotropic dielectric regions ended by anisotropic perfectly matched layers (PMLs). The boundary-value problem is solved and the dispersion relation inside the PML is derived. The general expression of the eigenvalues equation for an arbitrary number of regions in each layer is obtained, and both polarization modes...

During a six months internship, the structuring of electrical vias by direct dewetting on gold substrates patterned with microcontact printing has been explored. A high modulus polymer has been tested to avoid roof collapse during the printing of the contact holes. The dewetting behaviour of potential candidates for the dielectric layer has been investigated. Conclusions: 1. Printing of the con...

The scaling of silicon-based MOSFET technology beyond the 22 nm node is challenging. Further progress requires new materials, innovative structures, and even novel device concepts. All the emergent channel materials need perfect top-gate dielectric stacks in order to sustain their potential device performance. ALD high-k as a common gate stack solution finds itself very successfully integrated ...

AlN/GaN single heterojunction MOS-HEMTs grown by molecular beam epitaxy have been fabricated utilising HfO2 high-K dielectrics deposited by atomic layer deposition. Typical DC transfer characteristics of 1.3 mm gate length devices show a maximum drain current of 950 mA/mm and a transconductance of 210 mS/mm with gate currents of 5 mA/mm in pinch-off. Unity gain cutoff frequencies, ft and fmax, ...