Electrical properties of three kinds of poly(methyl methacrylate) (PMMA) with different tacticity, i.e. isotactic(i), syndiotactic(s), and atatic(a), were investigated for the application in field effect transistor. Metal-insulator-silicon structures were fabricated via spin coating PMMA on heavily doped p-type silicon (p-Si) followed by evaporating gold electrode. The electrical characteristic...

The influence of processing parameters of aluminum oxide (Al2O3) and lanthanum oxide (La2O3) gate dielectric is investigated. Trimethylaluminum (TMA) and tris(isopropylcyclopentadienyl) lanthanum [La(iPrCp)3] were used as precursors separately, and H2O was used as oxidant. The ultra-thin La1 - x Al x O3 gate dielectric films are deposited on p-type silicon substrates by atom layer deposition (A...

The dielectric properties of ZrO2–Al2O3 nanolaminates, deposited via atomic layer deposition, and their impact on the performance and stability of indium gallium zinc oxide and zinc tin oxide amorphous oxide semiconductor thin-film transistors TFTs are investigated. It is found that nanolaminate dielectrics can combine the advantages of constituent dielectrics and produce TFTs with improved per...

Dual-frequency cholesteric liquid crystal (DFCLC) devices characteristically require high operation voltage, which hinders their further development in thin-film-transistor driving. Here we report on a lower-voltage switching method based on the thermodielectric effect. This technique entails applying a high-frequency voltage to occasion dielectric oscillation heating so to induce the increase ...

While metals benefit from a strong nonlinearity at optical frequencies, its practical exploitation is limited by the weak penetration of the electric field within the metal and the screening by the surface charges. It is shown here that this limitation can be bypassed by depositing a thin dielectric layer on the metal surface or, alternatively, using a thin metal film. This strategy enables us ...

Cadmium Selenide (CdSe) thin films were synthesized by chemical bath deposition (CBD) method. The XRD, SEM, UV-Visible absorption spectrum, dielectric studies and photoconductivity measurements were used to characterize the CdSe films. The X-ray diffraction (XRD) is used to examine the structure of CdSe thin film. The surface morphology of the film was analyzed using Scanning Electron Microscop...

The dielectric properties and tunability of multilayer thin films with compositional PbZr0.52Ti0.48O3/Bi1.5Zn1.0Nb1.5O7 (PZT/BZN) layers (PPBLs) fabricated by pulsed laser deposition on Pt/TiO2/SiO2/Si substrate have been investigated. Dielectric measurements indicate that the PZT/BZN bilayer thin films exhibit medium dielectric constant of about 490, low loss tangent of 0.017, and superior tun...

To achieve a high capacitance density for embedded decoupling capacitor applications, the aerosol deposition (AD) process was applied as a thin film deposition process. BaTiO3 films were fabricated on Cu substrates by the AD process at room temperature, and the film thickness was reduced to confirm the limit of the critical minimum thickness for dielectric properties. As a result, the BaTiO3 th...

The functional properties of two types of barium strontium titanate ~BST! thin film capacitor structures were studied: one set of structures was made using pulsed-laser deposition ~PLD! and the other using chemical solution deposition. While initial observations on PLD films looking at the behavior of Tm ~the temperature at which the maximum dielectric constant was observed! and Tc* ~from Curie...

The properties of thermal radiation exchange between hot and cold objects can be strongly modified if they interact in the near field where electromagnetic coupling occurs across gaps narrower than the dominant wavelength of thermal radiation. Using a rigorous fluctuational electrodynamics approach, we predict that ultra-thin films of plasmonic materials can be used to dramatically enhance near...