نتایج جستجو برای: donor impurity

تعداد نتایج: 76749  

2008
Kozo YAMAZAKI Ikuhiro YAMADA Tetsutarou OISHI Hideki ARIMOTO Tatsuo SHOJI

The impurity transport simulation code TOTAL (TOroidal Transport Analysis Linkage) consisting of 1-D(dimensional) transport and 2or 3-D equilibrium is developed for analyzing tokamak and helical burning plasmas controlled by feedback scheme with gas puffing, pellet fueling injection and heating power modulations. In this code multi-species of impurity ions can be treated including neoclassical ...

1997
Andrei A. Zvyagin Henrik Johannesson Mats Granath

We study a multichannel one-dimensional (1D) supersymmetric t−J model with an added magnetic impurity of arbitrary spin S. The antiferromagnetic impurity-electron interaction is chosen so as to preserve integrability, allowing for an exact diagonalization of the model by a Bethe Ansatz. The solution reveals that interactions in the bulk make the magnetic impurity drive both spin and charge fluc...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2009
Kai-He Ding Zhen-Gang Zhu Jamal Berakdar

We study the localized magnetic states of an impurity in biased bilayer and trilayer graphene. It is found that the magnetic boundary for bilayer and trilayer graphene shows mixed features of Dirac and conventional fermions. For zero gate bias, as the impurity energy approaches the Dirac point, the impurity magnetization region diminishes for bilayer and trilayer graphene. When a gate bias is a...

2008
Beibing Huang Shaolong Wan

In this paper we study an impurity in Bose-Einstein-Condensate system at T = 0K and suppose the contact forms for boson-boson and boson-impurity interactions. Using Bogoliubov theory and a further approximation corresponding to only think over the forward scattering of impurity by bosons, we derive a reduced Hamiltonian whose form is the same as the Fröhlich Hamiltonian for large polaron. By us...

2016
Jun Li Hideo Hosono Keiichi Tanabe Yan-Feng Guo Zhao-Rong Yang Kazunari Yamaura Eiji Takayama-Muromachi Hua-Bing Wang Pei-Heng Wu

We review the progress of nonmagnetic impurity doping studies on Fe-based superconductors. On the theoretical side, two highly promising candidates for the pairing symmetry order parameter, i.e. the multi-gap s++ and s± wave models, have been proposed but continuously debated. The debate arises because of the complex gap structure and exceptional magnetic and metallic behaviors of Fe-based supe...

2008
R. Burhenn

The Large Helical Device (LHD) and Wendelstein 7-X (W7-X, under construction) are experiments specially designed to demonstrate long pulse (quasi steady-state) operation, which is an intrinsic property of Stellarators and Heliotrons. Significant progress was made in establishment of high performance plasmas. A crucial point is the increasing impurity confinement towards high density as observed...

Journal: :Journal of physics. Condensed matter : an Institute of Physics journal 2013
C González-Santander T Apostolova F Domínguez-Adame

We calculate the binding energy of on- and off-center hydrogenic impurities in a parabolic quantum dot subjected to an intense high-frequency laser field. An exactly solvable model that replaces the actual Coulomb interaction with the donor by a non-local separable potential is introduced for calculating the binding energy. The separable potential allows us to solve the problem exactly and all ...

2003
C. Wetzel K. Pressel S. Nilsson

Recent progress in the growth of high quality 6H-SiC single crystal leads to an ideal substrate material for GaN epitaxial films. Nearly matching lattice constants of wurzite GaN to 6H-SiC in the hexagonal plane can reduce strain effects at the interface. We employed the sublimation sandwich method to grow single crystal layers at reasonable growth rates with free carrier concentrations of 2x10...

2011
E. R. Glaser M. Murthy J. A. Freitas D. F. Storm L. Zhou D. J. Smith

Low-temperature photoluminescence (PL) and optically detected magnetic resonance (ODMR) at 24GHz have been performed on a series of MBE-grown Mg-doped (10–10 cm ) GaN homoepitaxial layers. High-resolution PL at 5K revealed intense bandedge emission with narrow linewidths (0.2–0.4meV) attributed to annihilation of excitons bound to shallow Mg acceptors. In contrast to many previous reports for G...

2009
M L Orlov

The effect of negative resistivity observed at anomalously low voltages in output characteristics of modulation-doped In0.53Ga0.47As/In0.52Al0.48As field-effect transistors is considered. In the discussed experiments, the threshold for appearance of negative resistivity depends not only on the gate length, which was mentioned before, but also on the gate–drain voltage. It is shown that the nega...

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