DNA double-strand breaks (DSBs) can be repaired by homologous recombination (HR), which can involve Holliday junction (HJ) intermediates that are ultimately resolved by nucleolytic enzymes. An N-terminal fragment of human GEN1 has recently been shown to act as a Holliday junction resolvase, but little is known about the role of GEN-1 in vivo. Holliday junction resolution signifies the completio...

The deposition of a stack of amorphous a-Si:H and microcrystalline c-Si:H tandem thin film silicon solar cells micromorph requires at least twice the time used for a single junction a-Si:H cell. However, micromorph devices have a higher potential efficiency, thanks to the broader absorption spectrum of c-Si:H material. High efficiencies can only be achieved by mitigating the nanocracks in the c...

Organometal-halide perovskite solar cells have greatly improved in just a few years to a power conversion efficiency exceeding 20%. This technology shows unprecedented promise for terawatt-scale deployment of solar energy because of its low-cost, solution-based processing and earth-abundant materials. We have studied charge separation and transport in perovskite solar cells-which are the fundam...

tellurium (te) nanostructures have been successfully synthesized via a simple hydrothermal methodfrom the reaction of a tecl4 aqueous solution with thioglycolic acid (tga) as a reductant. tga can be easily oxidized to the corresponding disulfide [sch2co2h]2, which in turn can reduce tecl4 to te. the obtained te was characterized by xrd, sem, eds, and drs. the effect of reducing agent on morphol...

A way to increase the photocurrent of top-cell is crucial for current-matched and highly-efficient GaInP/GaInAs/Ge triple-junction solar cells. Herein, we demonstrate that ellipsoidal silver nanoparticles (Ag NPs) with better extinction performance and lower fabrication temperature can enhance the light harvest of GaInP/GaInAs/Ge solar cells compared with that of spherical Ag NPs. In this metho...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

We report the first successful application of an ordered bicontinuous gyroid semiconducting network in a hybrid bulk heterojunction solar cell. The freestanding gyroid network is fabricated by electrochemical deposition into the 10 nm wide voided channels of a self-assembled, selectively degradable block copolymer film. The highly ordered pore structure is ideal for uniform infiltration of an o...

We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes. The prototype cells comprise of InGaNAs (Indium Gallium Nitride Arsenide) bottom junction grown on a GaAs (Gallium Arsenide) substrate by MBE and middle and top junctions deposited...

The effect of single and double-layer anti-reflective coatings on efficiency enhancement of silicon solar cells was investigated. The reflectance of different anti-reflection structures were calculated using the transfer matrix method and then to predict the performance of solar cells coated by these structures, the weighted average reflectance curves were used as an input of a PC1D simulation....

MoS2 is a layered two-dimensional semiconductor with a direct band gap of 1.8 eV. The MoS2/bulk semiconductor system offers a new platform for solar cell device design. Different from the conventional bulk p-n junctions, in the MoS2/bulk semiconductor heterostructure, static charge transfer shifts the Fermi level of MoS2 toward that of bulk semiconductor, lowering the barrier height of the form...