We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface lig...

We investigated the effect of the Rashba spin–orbit coupling in two-dimensional electron gases and quasi one-dimensional wire structures based on a strained InGaAs/InP heterostructure. For the two-dimensional electron gas structure it is demonstrated that the Rashba effect can be controlled by using a gate electrode. By a detailed discussion it is shown that our heterostructure can be employed ...

Here, we demonstrate a rapid and simple method for doping a reduced graphene oxide (rGO) field effect transistor (FET) with nanocrystals to produce dual n-type behavior with light and bias voltage. This convenient method promises industrial level doping of graphene transistors.

A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented. Electrical pulses of about 90 ps up to 800 ps duration are generated with a maximum amplitude of approximately 7 V at 50. The bipolar transistor is driven into saturation and the base-collector and base-emitter junctions become fo...

In this work, the effect of displacement defect (DD) owing to cosmic rays on six-transistor (6T) static random access memory (SRAM) with a 3 nm node nanosheet field-effect transistor (NSFET) is investigated using technology computer-aided design (TCAD) simulation. order comprehensively study uncertainty radiation NSFET 6T SRAM, shape DD cluster cross-section and damaged by in SRAM are considere...