نتایج جستجو برای: electronic band structures

تعداد نتایج: 779030  

2015
Mukta V. Limaye S. C. Chen C. Y. Lee L. Y. Chen Shashi B. Singh Y. C. Shao Y. F. Wang S. H. Hsieh H. C. Hsueh J. W. Chiou C. H. Chen L. Y. Jang C. L. Cheng W. F. Pong Y. F. Hu

The correlation between sub-band gap absorption and the chemical states and electronic and atomic structures of S-hyperdoped Si have been extensively studied, using synchrotron-based x-ray photoelectron spectroscopy (XPS), x-ray absorption near-edge spectroscopy (XANES), extended x-ray absorption fine structure (EXAFS), valence-band photoemission spectroscopy (VB-PES) and first-principles calcu...

2014
Hao Hu Zhengfei Wang Feng Liu

Two-dimensional (2D) hexagonal organometallic framework (HOMF) made of triphenyl-metal molecules bridged by metal atoms has been recently shown to exhibit exotic electronic properties, such as half-metallic and topological insulating states. Here, using first-principles calculations, we investigate systematically the structural, electronic, and magnetic properties of such HOMFs containing 3d tr...

2013
Jesper Toft Rasmussen Tue Gunst Peter Bøggild Antti-Pekka Jauho Mads Brandbyge

Local curvature, or bending, of a graphene sheet is known to increase the chemical reactivity presenting an opportunity for templated chemical functionalisation. Using first-principles calculations based on density functional theory (DFT), we investigate the reaction barrier reduction for the adsorption of atomic hydrogen at linear bends in graphene. We find a significant barrier lowering (≈15%...

2012
Hua Zhou Hui-Qiong Wang Xia-Xia Liao Yufeng Zhang Jin-Cheng Zheng Jia-Ou Wang Emin Muhemmed Hai-Jie Qian Kurash Ibrahim Xiaohang Chen Huahan Zhan Junyong Kang

Polar and nonpolar ZnO thin films were deposited on MgO (001) substrates under different deposition parameters using oxygen plasma-assisted molecular beam epitaxy (MBE). The orientations of ZnO thin films were investigated by in situ reflection high-energy electron diffraction and ex situ X-ray diffraction (XRD). The film roughness measured by atomic force microscopy evolved as a function of su...

2008
X. Y. Cui K. Shimada M. Hoesch Y. Sakisaka H. Kato Y. Aiura M. Higashiguchi Y. Miura H. Namatame M. Taniguchi

A high-resolution angle-resolved photoemission spectroscopy (ARPES) study of Fe(110) single crystal was conducted to elucidate many-body interactions between quasi-particles at the Fermi level at low temperature. Two kink structures were observed in the energy-band dispersion at the binding energies of ~40 meV and ~270 meV for the bulk-derived band on the majority-spin Fermi surface around the ...

2000
M. Durandurdu D. A. Drabold N. Mousseau

We report on ab initio calculations of electronic states of two large and realistic models of amorphous silicon generated using a modified version of the Wooten-Winer-Weaire algorithm and relaxed, in both cases, with a Keating and a modified Stillinger-Weber potentials. The models have no coordination defects and a very narrow bond-angle distribution. We compute the electronic density-of-states...

2015
Zhao Zhao Haijun Zhang Hongtao Yuan Shibing Wang Yu Lin Qiaoshi Zeng Gang Xu Zhenxian Liu G. K. Solanki K. D. Patel Yi Cui Harold Y. Hwang Wendy L. Mao

Layered transition-metal dichalcogenides have emerged as exciting material systems with atomically thin geometries and unique electronic properties. Pressure is a powerful tool for continuously tuning their crystal and electronic structures away from the pristine states. Here, we systematically investigated the pressurized behavior of MoSe2 up to ∼ 60 GPa using multiple experimental techniques ...

2011
Binay Prasai Bin Cai Kylee Underwood James P. Lewis

We used first-principle simulation methods to generate amorphous TiO2 (a-TiO2) models and obtained chemically-ordered amorphous networks. We analyzed the structural and the electronic properties of the resulting computationally generated structures. We propose that two peaks found in the Ti-Ti pair correlation correspond to the edge-sharing and the corner-sharing Ti-Ti pairs. Resulting coordina...

Journal: :Science China. Materials 2022

The application of machine learning (ML) to electronic structure theory enables property prediction with ab initio accuracy. However, most previous ML models predict one or several properties intrinsic materials. band structure, which embeds all the main information, has yet be deeply studied. This is a challenging task due highly variable inputs and outputs; input materials may have different ...

2001
C. Wetzel

The absorption properties in hetero-polarization GaN/AlxGa1 xN (x 1⁄4 0:06) quantum well structures are studied in reflection, photoreflection, and photoluminescence excitation spectroscopy and compared with the results of band structure calculations. Above the energy of the main luminescence transitions we observe three distinct absorption thresholds. From Franz-Keldysh oscillations in the abs...

نمودار تعداد نتایج جستجو در هر سال

با کلیک روی نمودار نتایج را به سال انتشار فیلتر کنید