Damages are created in a sacrificial layer of silicon dioxide by ion implantation to enhance the etch rate of silicon-dioxide in liquid and vapor phase hydrofluoric acid. The etch rate ratio between implanted and unimplanted silicon dioxide is more than 150 in vapor hydrofluoric acid (VHF). This feature is of interest to greatly reduce the underetch of microelectromechanical systems anchors. Ba...

BACKGROUND AND AIM: According to the effect of the adhesive and substrate type on the bond strength, examination of the adhesive is required in all aspects. The aim of this study was to evaluate the shear bond strength of different adhesive systems to normal dentin (ND) and caries affected dentin (CAD) in permanent teeth. METHODS: Thirty extracted molars with small occlusal caries were selected...

The etch rate of n-type Si in diluted HF solutions was investigated as a function of the bias voltage applied to the Si/electrolyte interface in the dark and under illumination. It was observed that the etch rate depends very sensitively on the minority carrier flow through this interface. For an illumination intensity of 5.3x 1016 photons/cm2s (2 = 550 nm) and the depleted Si/electrolyte inter...

background: the aim of this study was to evaluate the shear bond strength of an antimicrobial and fluoride-releasing self-etch primer (clearfil protect bond) and compare it with transbond plus self-etch primer and conventional acid etching and priming system. materials and methods: forty-eight extracted human premolars were divided randomly to three groups. in group 1, the teeth were bonded wit...

objective: evaluating the effect of dentin conditioning with edta on microleakage of composite resin restorations, using two etch and rinse and two self-etch adhesives. materials and methods: one hundred and sixty extracted molars received class v cavity preparations right under the cej and were randomly divided into eight groups of 20, usingfour different adhesive systems. these adhesives incl...

Real-time, in-situ control of reactive ion etching is shown to reduce loading disturbance in an Applied 8300 reactive ion etch system. The etch process vehicle is CF4 etching of polysilicon. A real-time, multivariable feedback control strategy where key plasma parameters are fed back has been developed. This strategy is experimentally compared with standard industry practice and is shown to red...

The water content of phosphoric acid in etching silicon nitride and silicon dioxide plays an important role. An increase in water content increases the etch rate of silicon nitride and decreases the etch rate of silicon dioxide. The highest possible temperature for a fixed water content at atmospheric pressure in the system H2O-P2O5 is realized by boiling the liquid and refluxing the vapor phas...

CMOS-MEMS is a promising approach to achieve integration of microelectromechanical structures with circuits by using foundry CMOS services coupled with post-CMOS processing. The most significant benefit is the low cost of manufacturing the mechanical structures with CMOS. We report suitable conditions for post-CMOS processing by reactive ion etching (RIE) to define the mechanical structures. Va...