A low cost nanosphere lithography method for patterning and generation of semiconductor nanostructures provides a potential alternative to the conventional top-down fabrication techniques. Forests of silicon pillars of sub-500 nm diameter and with an aspect ratio up to 10 were fabricated using a combination of the nanosphere lithography and deep reactive ion etching techniques. The nanosphere e...

The aim of this study was to compare the microleakage of total-etch and self-etch adhesives by three methods including dye extraction, dye penetration and fluid filtration with determining the correlation value among these techniques. Seventy-two premolar teeth were selected for this in vitro study and Class 5 cavities were prepared on the buccal surface of these at the cemento-enamel junction ...

The influence of reactor wall conditions on the characteristics of high density fluorocarbon plasma etch processes has been studied. Results obtained during the etching of oxide, nitride, and silicon in an inductively coupled plasma source fed with various feedgases, such as CHF3 , C3F6 , and C3F6/H2 , indicate that the reactor wall temperature is an important parameter in the etch process. Ade...

The main advantage of tetramethyl ammnium hydroxide (TMAH)-based solutions is their full compatibility with IC technologies. In this work a new etching system of TMAH/IPA (isopropyl alcohol) is suggested. The influence of the addition of IPA to TMAH solutions on their etching characteristics is presented. The etch rates of (100) oriented silicon crystal planes decreases linearly with decreasing...

Plasma etch is a complex semiconductor manufacturing process in which material is removed from the surface of a silicon wafer using a gas in plasma form. As the process etch rate cannot be measured easily during or after processing, virtual metrology is employed to predict the etch rate instantly using ancillary process variables. Virtual metrology is the prediction of metrology variables using...

The purpose of this study was to assess the clinical performance of composite restorations placed with different adhesive systems in primary teeth. In 32 patients, 128 composite restorations were placed using a split-mouth design as follows (4 groups/patient): three-step etch-and-rinse (Group 1), two-step etch-and-rinse (Group 2), two-step self-etch (Group 3), and one-step self-etch (Group 4). ...

Using a combination of low-pressure oxygen and high temperatures, isotropic and anisotropic silicon (Si) etch rates can be controlled up to ten micron per minute. By varying the process conditions, we show that the vertical-to-lateral etch rate ratio can be controlled from 1:1 isotropic etch to 1.8:1 anisotropic. This simple Si etching technique combines the main respective advantages of both w...

The purpose of this study was to evaluate the five-year clinical performance of a two-step self-etch adhesive in non-carious cervical sclerotic lesions with or without selective acid-etching of enamel margins. A total of 104 cervical restorations in 22 patients (46-64 years) were bonded following either self-etch approach (AdheSE non-etch) or a similar application, including selective acid-etch...