Coplanar waveguide transmission lines have been used to show that the temperature dependent properties of Ba 0.5 Sr 0.5 TiO 3 thin films used for microwave phase shifters in the frequency range 45 MHz– 50 GHz are correlated strongly with the microstructure of the films. The highest tunability and figure of merit of the phase shifters were obtained for films with the narrowest ferroelectric-para...

The stability and evolution of ferroelectric domain structures in thin films are studied. Elastic solutions are derived for both elastically anisotropic and isotropic thin films with arbitrary domain structures, subject to the mixed stressfree and constraint boundary conditions. These solutions are employed in a three-dimensional phase-field model to investigate simultaneously the effect of sub...

Ferroelectric thin films are currently being used to develop tunable microwave circuits based on the electric-field dependence of the dielectric constant. (Ba0.5Sr0.5)TiO3 ~BST! films prepared by sputtering on Pt/TiO2 /SiO2 /Si substrates are found to exhibit a capacitance change ~tunability! of nearly 4:1. Higher tunability has been attributed to the ~100! texturing of the BST films and is a r...

Multiferroic materials, which offer the possibility of manipulating the magnetic state by an electric field or vice versa, are of great current interest. However, single-phase materials with such cross-coupling properties at room temperature exist rarely in nature; new design of nano-engineered thin films with a strong magneto-electric coupling is a fundamental challenge. Here we demonstrate a ...

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Heterostructures of thin titania films on BiFeO3 substrates were grown by pulsed laser deposition. The heterostructures, when excited by visible light with energies between 2.53 and 2.70 eV, photochemically reduce aqueous silver cations from solution in patterns that mimic the structure of the ferroelectric domains in the substrate. Under the same conditions, titania by itself reduces insignifi...

The magnetic exchange between epitaxial thin films of the multiferroic (antiferromagnetic and ferroelectric) hexagonal YMnO3 oxide and a soft ferromagnetic (FM) layer is used to couple the magnetic response of the FM layer to the magnetic state of the antiferromagnetic one. We will show that biasing the ferroelectric YMnO3 layer by an electric field allows control of the magnetic exchange bias ...

Using multiscaling analysis, we compare the characteristic roughening of ferroelectric domain walls in Pb(Zr0.2Ti0.8)O3 thin films with numerical simulations of weakly pinned one-dimensional interfaces. Although at length scales up to L(MA)≥5  μm the ferroelectric domain walls behave similarly to the numerical interfaces, showing a simple monoaffine scaling (with a well-defined roughness expone...

The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. In this paper, we investigate the polarization state of archetypal ultrathin (several nanometres) ferr...

Barium Titanate (BaTiO3) and Lithium Niobate (LiNb03) thin films (0,2 to 1 pm) were deposited ont0 Platinum foils and Silicon wafers (M. 1. S. capacitor structure). In the present work, polycristalline films which had been prepared by R. F. cathodic sputtering of ceramic targets were studied. With a substrate temperature below 300 OC during the deposition, good insulating amorphous films with a...