By using the Riccati technique, which reduces higher order dynamic equations to a inequality, we will establish some new sufficient conditions for oscillation of half-linear/Emden-Fowler neutral equation form \[ (r(\varrho)((\mathbf{\mathbf{x}}(\varrho)+p(\varrho)\mathbf{x}(\tau (\varrho)))^{\Delta })^{\gamma })^{\Delta }+q(\varrho)\mathbf{x}^{a }(\delta (\varrho))+v(\varrho)\mathbf{x}^{\beta }...

1 Department of Mathematics, University of South Florida, 4202 East Fowler Ave., Tampa, FL 33620, USA; e-mail: [email protected] 2 Institute for Constructive Mathematics, Department of Mathematics, University of South Florida, 4202 East Fowler Ave., Tampa, FL 33620, USA; e-mail: [email protected] 3 Department ofMathematics and Statistics, University of Cyprus, P.O. Box 20537,Nicosia, Cypru...

In this paper, we establish two kinds of Emden–Fowler type equations of third order. We investigate the linear and the nonlinear third-order equations, with specified initial conditions, by using the systematic variational iteration method. We corroborate this study by investigating several Emden–Fowler type examples with initial value conditions.

This research investigates electrical properties of E-mode AlGaN/GaN HEMTs with n-type β-Ga2O3/p-GaN gate stack under different work functions 4.6, 5.1 and 5.7 eV, respectively. The simulated results show that the device function eV exhibits largest threshold voltage 2.8 V while having lowest saturation drain current 0.15 A mm−1, which can be ascribed to highest Schottky barrier, leading least ...