Orientation-patterned gallium phosphide (OP-GaP) has been grown heteroepitaxially on OP arsenide (GaAs) templates using hydride vapor phase epitaxy (HVPE). The effect of OP-GaAs template fabrication methods epitaxial-inversion and wafer bonding the heteroepitaxial OP-GaP growth investigated. layers with a rate up to 35 µm/h excellent domain fidelity were obtained. have revealed/studied by scann...

Abstract The advancement in technology semiconductor materials significantly contributed improvement of human life by bringing breakthrough fabrication optoelectronics and power devices which have wide applications medicine communication. Gallium Arsenide (GaAs) Nitride (GaN) are versatile for such but with relative merits demerits. GaAs transistors suitable both narrowband wideband due to very...

The readout of detector arrays requires the monolithic or hybrid integration of a integrate circuit multiplexer with the detector array. In most LWIR and VLWIR applications, a hybrid approach is used. For example, the detector array may be built from HgCdTe and the readout integrated circuit may be silicon CMOS [1]. The two integrated circuits are mated through a bump-bonding process in which e...

A four-terminal tandem structure based on the copper indium gallium selenide (CIGS) solar cell is a viable approach to achieve high efficiency. For this purpose, dual-junction configuration, consisting of experimental CIGS with record efficiency 23.35% as bottom and wide bandgap thin-film absorbers top cell, evaluated by modeling. Herein, effects luminescence efficiency, optical absorption, ban...

rapidly, with many new achievements and records reported by research groups at the 2017 Symposium on VLSI Technology and Circuits in Kyoto, Japan (5–9 June). Most of the reported work involved indium gallium arsenide (InGaAs), particularly integrated with silicon (Si) substrates aiming for low-cost mass production. We report here on those sessions, along with research aimed at gallium nitride (...

The increasing use of production systems has drawn attention to their performance drawbacks. To address these problems, investigations of algorithms and machine types for supporting production systems are being conducted. This paper discusses the architecture and implementation of a uniprocessor OPS production system machine. A brief tutorial on the OPS production system and its Rete algorithm ...

1.1.3 Chemical and physical properties of the pure substance (a) Description: Grey, cubic crystals (Lide, 2003) (b) Melting-point: 1238 °C (Lide, 2003) (c) Density: 5.3176 g/cm (Lide, 2003) (d) Solubility: Insoluble in water (Wafer Technology Ltd, 1997); slightly soluble in 0.1 M phosphate buffer at pH 7.4 (Webb et al., 1984) (e) Stability: Decomposes with evolution of arsenic vapour at tempera...

This paper gives an overview of the materials and methods used for fabricating photovoltaic solar cell devices. The technologies discussed include those based on the use of silicon (in the crystalline, multicrystalline, amorphous and micro-crystalline forms), the IIIeV compounds (e.g. gallium arsenide, indium phosphide and gallium antimonide), the polycrystalline compounds (e.g. cadmium telluri...

Gallium Arsenide memories, which are now beginning to be used commercially, are subject to certain unusual parametric faults, not normally seen in silicon or other memory devices. This paper studies the behavior of Gallium Arsenide High Electron Mobility Transistor (HEMT) memories in the presence of material defects, processing errors and design errors to formulate efficient testing schemes. Al...

Nano/microstructures of compound semiconductors such as gallium arsenide (GaAs) demonstrate enormous potential for advanced photonic technologies they provide realistic means miniaturization optoelectronic devices that feature better performance and low power consumption. However, intimately integrating them onto flexible substrates is challenging restricts their use in the next generation appl...