نتایج جستجو برای: ge models
تعداد نتایج: 926619 فیلتر نتایج به سال:
To develop a live vaccine for equine herpesvirus type 1 (EHV-1), two EHV-1 mutants containing no heterogeneous DNA, DeltagI and DeltagE, were constructed with deletions in the open reading frame of either glycoprotein I (gI) or E (gE), respectively. In equine cell culture, deletion mutants formed smaller plaques than the parental and revertant viruses, but the one-step growth patterns of the de...
The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate p...
Varicella-zoster virus (VZV) encodes a functional cell membrane Fc receptor called glycoprotein gE. VZV gE resembles other mammalian cell membrane receptors, such as the mammalian Fc receptor. In further analyses by transient transfection, the cellular trafficking of VZV gE was compared to other cell surface receptors. VZV gE was shown to undergo endocytosis from the cell membrane when visualiz...
در این تحقیق، مشخصه های جریان، توان و بازده کوانتومی در آشکارساز تک حاملی utc-pd و پهنای باند در آشکارساز تک حاملی p-ge/i-si/n-si بررسی می شود و با استفاده از نظریه آشکارساز حلقوی، برای نخستین بار آشکارساز حلقوی تک حامل روندهp-ge/i-si/n-si طراحی و ارائه می شود. الگوی ارائه شده برای ساختار p-ge/i-si/n-si mr-utc-pd متشکل از الگوهای ساختار آشکارساز تک حامل رونده p-ge/i-si/n-si و ساختار موجبر حلقوی...
Here, we report the synthesis of Si(x)Ge(1-x) nanowires with x values ranging from 0 to 0.5 using bulk nucleation and growth from larger Ga droplets. Room temperature Raman spectroscopy is shown to determine the composition of the as-synthesized Si(x)Ge(1-x) nanowires. Analysis of peak intensities observed for Ge (near 300 cm(-1)) and the Si-Ge alloy (near 400 cm(-1)) allowed accurate estimatio...
The adsorption of hydrogen on Ge 001 has been studied with scanning tunneling microscopy at 77 K. For low doses 100 L a variety of adsorption structures has been found. We have found two different atomic configurations for the Ge-Ge-H hemihydride and a third configuration that is most likely induced by the dissociative adsorption of molecular hydrogen. The Ge-Ge-H hemihydride is either buckled ...
the present study was an attempt to conduct a contrastive analysis between general english (ge) and english for specific purposes (esp) texts in terms of cohesion and cohesive devices. to this end, thirty texts from different esp and ge textbooks were randomly selected. then they were analyzed manually to find the frequency of cohesive devices. cohesive devices include reference, substitution, ...
We discuss in detail the dependence of Gallium Anomaly on detection cross section. provide updated values size and find that its significance is larger than about $5\sigma$ for all section models. assumed value half life ${}^{71}\text{Ge}$, which determines sections transitions from ground state ${}^{71}\text{Ga}$ to ${}^{71}\text{Ge}$. show a ${}^{71}\text{Ge}$ standard one can reduce or even ...
The role of alphaherpesvirus membrane protein internalization during the course of viral infection remains a matter of speculation. To determine the role of internalization of the pseudorabies virus (PRV) gE and gI proteins, we constructed viral mutants encoding specific mutations in the cytoplasmic tail of the gE gene that inhibited internalization of the gE-gI complex. We used these mutants t...
We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin fi...
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