Aeolian sandy grassland area is the main geomorphic type in north of Yulin. The ecological environment fragile and problem desertification serious, which needs to be controlled urgently. introduction herbs considered an effective means control beach area. In this paper, licorice was selected as indicator crop, performance under different treatments Yulin Sandy Grassland observed through field e...

The crystal structures of bis-[4'-(pyridin-4-yl)-2,2':6',2''-terpyridine]-man-gan-ese(II) bis-(hexa-fluorido-phosphate) monohydrate, [Mn(C20H14N4)2](PF6)2·H2O, (1), and bis-[4'-(pyridin-4-yl)-2,2':6',2''-terpyridine]-manganese(II) bis(hexa-fluorido-phosphate) acetone monosolvate, (2), [Mn(C20H14N4)2](PF6)2·CH3COCH3, are described. At 150 K, (1) and (2) have monoclinic (P21/c) and ortho-rhom-bic...

GaN-based metal-oxide-semiconductor capacitors with ZrO2 as the dielectric layer have been prepared by atomic layer deposition. The accumulation and depletion regions can be clearly distinguished when the voltage was swept from -4 to 4 V. Post-annealing results suggested that the capacitance in accumulation region went up gradually as the annealing temperature increased from 300 to 500 °C. A mi...

Feiyue Ma,† Yun Ou,‡ Yang Yang,† Yuanming Liu,† Shuhong Xie,†,‡ Jing-Feng Li,§ Guozhong Cao, Roger Proksch,⊥ and Jiangyu Li*,† Department of Mechanical Engineering, UniVersity of Washington, Seattle, Washington 98195-2600, United States, Key Laboratory of Low Dimensional Materials and Application Technology of Ministry of Education, and Faculty of Materials, Optoelectronics and Physics, Xiangta...

We present preliminary results of a theoretical investigation of the thermal conductivity of polycrystalline GaN films. It is assumed that grain boundaries play a major role in limiting the thermal conductivity, which is calculated using the phononhopping transport approach. The effect of the grain size, size dispersion, and inter-grain interface structure on the thermal conductivity values is ...

The nature of structural degradation in AlGaN/GaN high electron mobility transistors (HEMTs) are investigated in this work. Moisture from the environment and/or adsorbed water on the III-N surface were found to play an important role in the formation of surface pits during OFF-state electrical stress. The mechanism of this water-related structural degradation is explained by an electrochemical ...

Atomically thin layers of nitrides are a subject of interest due to their novel applications. In this paper, we focus on GaN multilayers, investigating their stability and the effects of stacking and electric fields on their electronic properties in the framework of density functional theory. Both bilayers and trilayers prefer a planar configuration rather than a buckled bulk-like configuration...