نتایج جستجو برای: graphene oxide thin film

تعداد نتایج: 388312  

Journal: :Opto-Electronic Advances 2021

Ultrathin flat metalenses have emerged as promising alternatives to conventional diffractive lenses, offering new possibilities for myriads of miniaturization and interfacial applications. Graphene-based materials can achieve both phase amplitude modulations simultaneously at a single position due the modification complex refractive index thickness by laser conversion from graphene oxide into l...

Ghassemi, N, Zolfaghari, M,

Graphene is a promising candidate for future high-speed electronics applications. It is a thin layer of pure carbon in which every atom is available for chemical reaction from two sides (due to the 2D structure). This is the only form of carbon (or solid material) with this characteristic feature. Graphene oxide (GO) was synthesized through the oxidation of graphite using the Hummer’s method, i...

Journal: :iranian journal of catalysis 2014
mohammad a. nasseri ali allahresani heidar raissi

nano-graphene oxide was synthesized by the oxidation of graphite powders. the structural nature of the nano-graphene oxide was characterized by a variety of techniques including xrd, tem, ft-ir and uv/vis. the functional groups on its basal planes and edges of nano-grahene oxide play important role in catalytic activity. the catalytic activity of nano-graphene oxide was investigated on crossed-...

   High transparent conductive indium tin oxide/titanium dioxide (ITO/TiO2) nanostructured thin film is prepared by sol-gel dip-coating technique. This method yielded monodisperse ITO nanoparticles with mean diameter of 12 nm. The atomic composition of the Sn within the ITO structure changed from 0-20 wt.%. Through controlled annealing temperature at 550 oC, the result...

Journal: :IOP Conference Series: Materials Science and Engineering 2018

Journal: :IEEE Transactions on Electron Devices 2022

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2012
En Yang Hoan Ho David E. Laughlin Jian-Gang Zhu

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2010
R. Sarma D. Saikia P. Saikia P. K. Saikia R. Sharma

Tetracene thin film transistors with rare earth oxide (Nd2O3) as gate dielectric is reported in this work. Rare earth oxide with high dielectric constant and low leakage current improve the performance of the organic thin film transistors (OTFTs). The fabricated tetracene OTFTs have shown good output characteristics with mobility 0.93x10 cm/V.s, ON-OFF ratio 3.3x10, sub-threshold swing 0.06 V/d...

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