In this research, the hafnium titanate oxide thin films, TixHf1-xO₂, with titanium contents of x = 0, 0.25, 0.9, and 1 were deposited on germanium substrates by atomic layer deposition (ALD) at 300 °C. The approximate deposition rates of 0.2 Å and 0.17 Å per cycle were obtained for titanium oxide and hafnium oxide, respectively. X-ray Photoelectron Spectroscopy (XPS) indicates the formation of ...

Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GIXRD analysi...

and Swirl Gas Angle on Evaporation of Hafnium Cathode in a Plasma Cutting Arc Nguyen Phi Long1, Y. Tanaka1, Y. Uesugi1, and Y. Yamaguchi2 1Division of Electrical Engineering and Computer Science, Kanazawa University, Kakuma, Kanazawa 920-1192, Japan 2Komatsu Industries Corporation, Japan Abstract: The effects of arc current and swirl gas angle on plasma cutting arc were investigated using a dev...

Fluorite-type Ce0.5Zr0.5O2 and Ce0.5Hf0.5O2 have been synthesized by a solution combustion route, and their oxygen release and reduction have been investigated up to 850 degrees C. On reduction, the zirconium system forms two pyrochlore phases, Ce2Zr2O7 (pyrochlore-I) and Ce2Zr2O6.2 (pyrochlore-II), while the hafnium system forms only a disordered fluorite phase with the composition Ce0.5Hf0.5O...

Despite the increasing importance of hafnium in numerous technological applications, experimental and computational data on its binary alloys is sparse. In particular, data is scant on those binary systems believed to be phase-separating. We performed a comprehensive study of hafnium binary systems with alkali metals, alkaline earths, transition metals and metals, using high-throughput first-pr...

Chiral group 4 NHC-metal complexes were prepared in good yields by amine elimination from M(NR2)4 (M = Ti, Zr, Hf; R = Me, Et) and chiral pincer NHC-ligands, L4(L4a and L4b), L5 and L6, which are derived from (S,S)-diphenyl-1,2-ethanediamine. Treatment of M(NR2)4 with 1 equiv. of L4 in THF gives, after recrystallization from a benzene solution, the chiral titanium amides (L4)Ti(NMe2)(Br)(THF) (...

Hafnium oxide interfaces were studied on two related group III rich semiconductor surfaces, InAs(0 0 1)-(4x2) and In(0.53)Ga(0.47)As(0 0 1)-(4x2), via two different methods: reactive oxidation of deposited Hf metal and electron beam deposition of HfO(2). The interfaces were investigated with scanning tunneling microscopy and spectroscopy (STS). Single Hf atom chemisorption sites were identified...

Crystalline phase identification for hafnium-based ferroelectrics by diffraction techniques has been elusive. We use density-functional-theory (DFT)-assisted extended X-ray absorption fine-structure spectroscopy (EXAFS) to determine the crystal symmetry of thin hafnium zirconium oxide (Hf0.46Zr0.54O2) films grown atomic layer deposition. Ferroelectric switching in TiN/Hf0.46Zr0.54O2/TiN metal–i...

Establishing the age of the Moon is critical to understanding solar system evolution and the formation of rocky planets, including Earth. However, despite its importance, the age of the Moon has never been accurately determined. We present uranium-lead dating of Apollo 14 zircon fragments that yield highly precise, concordant ages, demonstrating that they are robust against postcrystallization ...