This work presents the design and implementation of a stand-alone linear power amplifier at 2.4 GHz with high output power. A GaN HEMT transistor is selected for the design and implementation of the power amplifier. The device exhibits a gain of 11.7 dB and a drain efficiency of 39 % for an output power of 36.7 dBm at 2.4 GHz for an input power of 25 dBm. The carrier to intermodulation ratio is...

We believe this is the first report that demonstrates that the inclusion of physically realistic intrinsic PM-HEMT noise parameters into an accurate PM-HEMT equivalent circuit predicts not only the noise figure, but also the optimum noise impedance and noise resistance, giving excellent agreement with experiment over a wide frequency range, when fitted at only one frequency. Previous efforts to...

Visible light communications (VLC) require III-nitride visible micro-light-emitting diodes (μLEDs) with a high-modulation bandwidth. Such μLEDs need to be driven at high injection current density on kA/cm2 scale, which is about 2 orders of magnitude higher than those for normal LED operation. are traditionally fabricated by dry-etching techniques where dry-etching-induced damages unavoidable, l...

p-GaN cap layer has been recognized as a commercial technology to manufacture enhanced-mode (E-mode) AlGaN/GaN high electron mobility transistor (HEMT); however, the difficult activation of Mg doping and etching damage limit further improvement device performance. Thus, more cost-effective attracted wide attention in GaN-based HEMT. In this paper, p-type tin monoxide (p-SnO) was firstly investi...

There is a significantly increasing demand on developing microLED (μLED) based microdisplay which may be the only display system that can meet requirements for augmented reality/virtual reality systems, helmet mounted displays, and head-up displays. However, number of fundamental challenges cannot met by any existing technologies need to overcome before such with satisfied performance becomes p...

In this work, the dynamic behavior of gallium nitride on silicon high electron mobility transistors (GaN/Si HEMT) with carbon doped buffer is modeled using a finite state machine embedded into core Advanced SPICE Model for High Electron Mobility Transistor (ASM-HEMT). The model based physics trapping and detrapping electrons in at nitrogen-site acceptor trap (denoted here as C <sub xmlns:mml="h...

In this paper, The x Al 1-x As graded buffer was inserted between the InAlAs layer and pseudomorphic 0.66 Ga 0.34 channel to improve material quality in channel. results show that with 50 nm thickness can obtain a good heterojunction interface root mean square (RMS) of 0.154 nm. two dimensional electron gas (2-deg) mobility concentration were 8570 cm 2 /Vs. 2.7 −2 × 10 12 at 300K, respectively....

With the increase in renewable energy generation, microgrid has put forward higher requirements on power density and performance of photovoltaic inverter. In this paper, dynamic process inverter based cascode Gallium nitride (GaN) high electron mobility transistor (HEMT) for (PV) application is analyzed detail. The parasitic inductors capacitors have been considered our proposed equivalent mode...

This letter presents a 300GHz hybrid transceiver using CMOS and InP-HEMT, which achieves maximum data rate of 56Gb/s. A with mixer-last transmitter mixer-first receiver is utilized to up- down-convert the V-band IF signal 300GHz-band, while InP-HEMT used for PA LNA design. The also wireless communication in ch.13-24 (1.76Gbaud), ch.39-44 (3.52Gbaud), ch.52-54 (7.04Gbaud) ch.59 (10.56Gbaud) lowe...