We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expr...

A 36-element monolithic grid amplifier has been fabricated. The active elements are pairs of heterojunction-bipolar-transistors. Measurements show a peak gain of 5dB at 40GHz with a 3-dB bandwidth of 1.8 GHz(4.5%). Here we also report comparisons of p a t t e r n s and tuning curves between the measurements and theory. The grid includes base stabilizing capacitors which result in a highly stabl...

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Here we propose, for the first time, a solar cell characterized by a semiconductor transistor structure (n/p/n or p/n/p) where the base-emitter junction is made of a high-bandgap semiconductor and the collector is made of a low-bandgap semiconductor. We calculate its detailed-balance efficiency limit and prove that it is the same one than that of a double-junction solar cell. The practical impo...

A 3-D simulation of single event effects (SEEs) for domestic Silicon–Germanium heterojunction bipolar transistor (SiGe HBT) in extreme environment is performed with TCAD simulation tools. The influences of environment temperature and linear energy transfer (LET) on SEE are investigated. The combined effects of temperature and LET are also discussed. The results show some interesting phenomena b...

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The single-polysilicon non-self-aligned bipolar transistor in a 0.5-pm BiCMOS technology bas been converted into a double-polysilicon emitter-base self-aligned bipolar transistor with little increase in process complexity. Improved bipolar performance in the form of smaller base resistance and base-collector capacitance, larger knee current, higher peak cutoff frequency, and shorter ECL gate de...

-In this paper, we investigate a new reliability damage mechanism in SiGe Heterojunction Bipolar transistor (HBTs).This study differs from conventional HBT/SiGe device reliability associated with other stress. Since it results from an Electromagnetic field aggression which consists of a new stress methodology. The near-field bench is used to disturb with electromagnetic field the Device Under t...

Transistor bandwidths are approaching terahertz frequencies. Paramount to high speed transistor operation is submicron device scaling. High bandwidths are obtained with heterojunction bipolar transistors by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, mini...

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