We present a method for the measurement of the noise of microwave amplifiers operating at the single photon level. It is based on the shot noise produced by a nanowire resistor in the hot electron regime. This noise source is simply controlled by a dc current and offers the advantage of being self-calibrating. After testing the noise source with a cryogenic high electron mobility transistor amp...

We have comprehensively investigated the degradation mechanism of AlGaAs/InGaAs pseudomorphic high-electron-mobility transistors (PHEMTs) under operation in high humidity conditions. PHEMTs degradation under high humidity with bias consists of a decrease in maximum drain current (Imax) caused by a corrosion reaction at the semiconductor surface at the drain side. The decrease in Imax is markedl...

Organic field-effect transistors (OFETs) were first described in 1987. Their characteristics have undergone spectacular improvements during the last two or three years. At the same time, several models have been developed to rationalize their operating mode. In this review, we examine the performance of OFETs as revealed by recently published data, mainly in terms of field-effect mobility and o...

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We report here on pentacene based organic field effect transistors (OFETs) with a high-k HfO2 gate oxide. HfO2 layers were prepared by two different methods: anodic oxidation and sol–gel. A comparison of the two processes on the electrical properties of OFETs is given. Ultra thin nanoporous (20 nm) sol–gel deposited oxide films were obtained following an annealing at 450 C. They lead to high mo...

We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum p-GaN cap layer. The GaN evaporation selectivity is demonstrated thin 2 nm AlN barrier Furthermore, regrowth AlGaN a major key to increase maximum drain current in transistors and enables co-integration depletion devices.

The continuous scaling down of feature size in Silicon technology has resulted in several technological and fundamental hindrances. The researchers started to look for new nanoscale devices those can replace CMOS transistors in digital circuits. The nanowire transistor, FinFET, Carbon Nanotube field effect transistor (CNFET), tunnel field effect transistor (TFET), and single electron transistor...

Single-electron transistor (SET) is a key element of current research area of nanotechnology which can offer low power consumption and high operating speed. Single electron transistor [SET] is a new nanoscaled switching device because single-electron transistor retains its scalability even on an atomic scale and besides this; it can control the motion of a single electron. The goal of this pape...