نتایج جستجو برای: horizontal planar defects
تعداد نتایج: 257935 فیلتر نتایج به سال:
In this work, extensive characterization and complementary theoretical analysis have been carried out on Au-catalyzed InP nanowires in order to understand the planar defect formation as a function of nanowire diameter. From the detailed transmission electron microscopic measurements, the density of stacking faults and twin defects are found to monotonically decrease as the nanowire diameter is ...
OBJECTIVES This study aimed to compare the efficacy of MTA and CEM cement in Class II furcation defects in human mandibular molars. MATERIALS AND METHODS Forty furcation defects were treated in 16 patients with chronic periodontitis. The clinical parameters of probing depth (PD), vertical and horizontal clinical attachment levels (VCAL and HCAL), open vertical and horizontal furcation depths ...
Cilia are microtubule-based protrusions that are found on the surface of most vertebrate cells. Long studied by cell biologists, these organelles have recently caught the attention of developmental biologists and human geneticists. In this review, I will discuss recent findings suggesting a link between cilia and the planar cell polarity signaling cascade. In particular, I will focus on how thi...
A directed graph is upward planar if it can be drawn in the plane such that every edge is a monotonically increasing curve in the vertical direction, and no two edges cross. An undirected graph is recti-linear planar if it can be drawn in the plane such that every edge is a horizontal or vertical segment, and no two edges cross. Testing upward planarity and rectilinear planarity are fundamental...
If humanoid robots are to be used in society, they should be able to maintain their balance. Knowing where to step is crucially important. In this paper we contribute an algorithm that can compute the foot step location such that bipedal balance is maintained for planar bipeds with point feet and an arbitrary number of non‐massless links on a horizontal and ...
An approach by which single crystal a-GaN can be grown laterally over oxidized AlAs (AlOx) formed on Si substrates is demonstrated. Regular a-Ga2-O3 stripe templates, spatially separated by AlOx , on which subsequent GaN growth is selectively seeded are formed. Since the boundary between the stripe template and AlOx is nominally planar, two pyramidal planes on separated GaN can merge by growing...
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