Theoretical calculations on the influence of both an external electric field and hydrostatic stress on the binding energy and impurity polarizability of shallowdonor impurities in an isolated GaAs–(Ga, Al)As quantum well are presented. A variational procedure within the effective-mass approximation is considered. The pressure-related –X crossover is taken into account. As a general feature, we ...

The triaxiality of the stress state is known to greatly influence the amount of plastic strain which a material may undergo before ductile failure occurs. It is defined as the ratio of hydrostatic pressure, or mean stress, to the von Mises equivalent stress. This paper discusses the effects of stress triaxiality on yielding behavior of anisotropic materials. Hill-von Mises’s criteria for anisot...

Based on computational fluid dynamics, friction lubrication theory and hydrostatic technology, large size hydrostatic Guide-way of heavy vertical CNC lathes,which are widely used, was taken as research object. The control equation of hydrostatic guide-way’s interstitial fluid was established. By finite volume method, lubricating oil properties, boundary conditions such as constant flow inlet, o...

The objective of this work is to prevent damage the arterial wall, using a theoretical model hyperelastic, anisotropic, and dynamic behavior human arterial. This mainly focused on properties hydrostatic stress evolution stenosis. stenosis in order understand effect size plaque deposit, loss elasticity increase density blood mechanical wall. great contribution shows us that increasing also incre...

For the simulation of tsunamis, the hydrostatic shallow water equations have established as a sound mathematical basis. However, due to the hydrostatic assumption, not all relevant physical effects—especially in coastal areas—can be modelled accurately. In this paper, we therefore show how to extend the PDE-framemwork sam(oa)2 towards modified non-hydrostatic shallow water equations. We use the...

2014 We present uniaxial stress measurements performed on the activation energies of both the deep EL2 center in GaAs (820 meV), often called « O » center, and the EL3 electronic trap (600 meV). The EL2 level is found to separate from the conduction band at a rate of (1.1 + 0.6) meV/kbar for uniaxial stress in the (100) direction and (0.8 ± 0.5) meV/kbar for uniaxial stress in the (111) directi...