Recently the first discovery of net laser cooling of a semiconductor has been announced: a group of Singapore researchers succeeded in cooling nanometer-thick belts of cadmium sulfide (CdS) grown by chemical vapor deposition on a silicon substrate with holes etched into it to permit optical access of a green laser beam onto the belts. This method of preparing the sample is laborious and not wel...

The synthesis of II-VI semiconductor nanoparticles obtained by the thermolysis of certain group 12 metal complexes as precursors is reported. Thermogravimetric analysis of the single source precursors showed sharp decomposition leading to their respective metal sulfides. The structural and optical properties of the prepared nanoparticles were characterized by means of X-ray diffraction (XRD), t...

Single-source molecular precursors were used to synthesize II-VI compound semiconductor nanowires for the first time. Cadmium sulfide and zinc sulfide nanowires were prepared using cadmium diethyldithiocarbamate, Cd(S2CNEt2)2, and zinc diethyldithiocarbamate, Zn(S2CNEt2)2, respectively, as precursors in a gold nanocluster-catalyzed vapor-liquid-solid growth process. High-resolution transmission...

Spatially composition-graded CdS(x)Se(1-x) (x = 0-1) nanowires are grown and transferred as parallel arrays onto Si/SiO(2) substrates by a one-step, directional contact printing process. Upon subsequent device fabrication, an array of tunable-wavelength photodetectors is demonstrated. From the spectral photoconductivity measurements, the cutoff wavelength for the device array, as determined by ...

Refractive and absorptive optical nonlinearity can be distinguished using a pump-probe interferometric technique with picosecond time resolution. The method is applied to both resonant and nonresonant nonlinearities in optical fibers and reveals marked differences between the relaxation behavior of the refractive and absorptive nonlinearity in certain cases. A monomode fiber doped with CdS(x)Se...

Single crys ta l semiconductors (n-Si, p-Si , n -GaAs , p -GaAs , n -GaP, n-In.P, and n -CdS) were coated wi th n t y p e TiO~ by a chemical vapor deposi t ion technique, and the e lec t ron and hole t r ans fe r proper t ies across the he te ro junct ion so produced were invest igated. The qua l i ty of the deposi ted TiO~ film depended upon severa l factors inc luding t empe ra tu r e and sub...

Efficient copper based thin film solar cells usually use inorganic n-type semiconductor material CdS as the buffer layer. Therefore, interface quality and energy band matching between layer absorption are crucial to collection utilization of carriers. Heat treatment can promote mutual diffusion elements, migration ions in material, change defect state, appropriate temperature will Cu-Zn orderin...

Photoelectron spectroscopy studies verify the occurrence of S/Se substitution in single crystal CdSe and CdS photoanodes when used in photoelectrochemical cells containing S2or Se 2solutions. A possible mechanism of the S /Se exchange is discussed as well as its consequences on the electrode stabi l i ty and the output parameters of the photoelectrochemical cells. A number of studies have shown...