We have measured the transport and quantum mobility in Si delta doped samples as a function of the doping concentration and the thickness of the doping layer. The results are compared with mobility calculations which show that the ionized impurity scattering rate is determined by the fluctuations in the charge distribution of the delta layer instead of the full charge distribution itself.

In a recent preprint [1] Ge et al. reply to our recent response [2] to some concerns raised in [3]. Several obvious remarks are necessary to clarify the situation, because the authors of [1] certainly misunderstand (or misinterpret) some of our statements. 1. In [3] and in [4] the authors imply that integrable magnetic impurities cannot exist in closed t−J and Hubbard chains (cf. P. 795 of [4] ...

The influence of inelastic relaxation time on the intrinsic spin Hall effects in a disordered two-dimensional electron gas with Rashba interaction is studied; we clarify the controversy as regards impurity effects in the system. We reveal that, due to the existence of inelastic scattering, the spin Hall conductivity does not vanish when the impurity concentration diminishes to zero, regardless ...

We analyze the effect of a single localized impurity on the local density of states in monoand bilayer undoped graphene. We show that for monolayer graphene the Friedel oscillations generated by intranodal scattering of quasiparticles obey an inverse-square law, while those generated by internodal scattering obey an inverse law. Unlike the former, the latter oscillations may break rotational sy...