With the advance of mature fabrication technologies, photonic integrated circuits (PICs) reach ever-higher levels of complexity. Integration of thousands of components has been shown [1], with each main technology showing an exponential growth in complexity [2]. This increase in complexity requires a convergence in technologies, and the roadmaps are currently being pushed by silicon nitride, (h...

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output p...

Treatment of indium trichloride with three equivalents of the cyclopentadienyliron carbonyl anions, [Fe(C O )2(?7-C5H4R)] (R = H, Me) affords the tri-iron indium com plexes [In{Fe(C O )2(//-C5H 4R )},] (R = H. Me) as dark red crystalline materials. Both compounds were characterized by spectroscopic and analytical methods. Infrared spectroscopy indicates that both com plexes are undissociated in...

Atomic-layer-deposition (ALD) of In2O3 nano-films has been investigated using cyclopentadienyl indium (InCp) and hydrogen peroxide (H2O2) as precursors. The In2O3 films can be deposited preferentially at relatively low temperatures of 160-200 °C, exhibiting a stable growth rate of 1.4-1.5 Å/cycle. The surface roughness of the deposited film increases gradually with deposition temperature, which...

Potassium indium bis-[hydrogen arsenate(V)], KIn(HAsO4)2, rubidium indium bis-[hydrogen arsenate(V)], RbIn(HAsO4)2, and caesium indium bis-[hydrogen arsenate(V)], CsIn(HAsO4)2, were grown under mild hydro-thermal conditions (T = 493 K, 7-8 d). KIn(HAsO4)2 adopts the KSc(HAsO4)2 structure type (space group C2/c), while RbIn(HAsO4)2 and CsIn(HAsO4)2 crystallize in the space group R-3c and are the...

A bismuth telluride (BT)/indium selenide (IS) multilayer film was deposited at room temperature by rf magnetron sputtering on a sapphire substrate in order to investigate how the multilayered structure affects the microstructure and thermoelectric properties. The effect of annealing at different temperatures was also studied. The results were compared with those from a BT film with the same thi...

An efficient method for the synthesis of ester-containing indium homoenolate via a direct insertion of indium into β-halo ester in the presence of CuI/LiCl was described. The synthetic utility of the indium homoenolate was demonstrated by palladium-catalyzed cross-coupling with aryl halides in DMA with wide functional group compatibility.

Metal-oxide (MO) semiconductors have emerged as enabling materials for next generation thin-film electronics owing to their high carrier mobilities, even in the amorphous state, large-area uniformity, low cost, and optical transparency, which are applicable to flat-panel displays, flexible circuitry, and photovoltaic cells. Impressive progress in solution-processed MO electronics has been achie...

This paper compares charge transport across self-assembled monolayers (SAMs) of n-alkanethiols containing odd and even numbers of methylenes. Ultraflat template-stripped silver (Ag(TS)) surfaces support the SAMs, while top electrodes of eutectic gallium-indium (EGaIn) contact the SAMs to form metal/SAM//oxide/EGaIn junctions. The EGaIn spontaneously reacts with ambient oxygen to form a thin (∼1...

J. Ibáñez,1,* R. Oliva,1 F. J. Manjón,2 A. Segura,3 T. Yamaguchi,4 Y. Nanishi,4 R. Cuscó,1 and L. Artús1 1Institut Jaume Almera, Consell Superior d’Investigacions Cientı́fiques, 08028 Barcelona, Catalonia, Spain 2Instituto de Diseño para la Fabricación y Producción Automatizada, MALTA Consolider Team-Universitat Politècnica de València, 46022 València, Spain 3Departamento de Fı́sica Aplicada-ICMU...