نتایج جستجو برای: ion beam sputtering

تعداد نتایج: 313044  

2005
C. Y. Peng C. Y. Liu N. W. Liu H. H. Wang A. Datta Y. L. Wang

Arrays of ideally ordered alumina nanochannels with unprecedented ,10 nm pore size, 40–50 nm interpore spacing, and improved channel uniformity have been fabricated by anodizing an aluminum substrate with a guiding pattern on its surface. The pattern is an array of hexagonally close-packed concaves fabricated by focused ion beam direct sputtering; and its lattice constant is carefully matched t...

2012
A. Mahmoodi M. Ghoranneviss M. Mojtahedzadeh S. H. Haji Hosseini M. Eshghabadi

The growth behavior of carbon nanotubes synthesized from C2H2 at the temperature range of 700 to 900°C and using thermal chemical vapor deposition (TCVD) method has been investigated. Thin films of nickel (Ni) catalyst, were coated on SiO2 substrates by ion beam sputtering technique. The formation of catalytic nickel nanoparticles was much increased when using NH3 as the environment gas which i...

Journal: :Nano letters 2011
C C Chen Y S Lin C H Sang J-T Sheu

We report a mask-free technique for the local synthesis of ZnO nanowires (NWs) on polysilicon nanobelts and polysilicon NW devices. First, we used localized joule heating to generate a poly(methyl methacrylate) (PMMA) nanotemplate, allowing the rapid and self-aligned ablation of PMMA within a short period of time (ca. 5 μs). Next, we used ion-beam sputtering to prepare an ultrathin Au film and ...

1997
R. P. Michel C. T. Wang L. E. Johnson

(001) oriented NiO/NiFe bilayers were grown on single crystal MgO (001) substrates by ion beam sputtering in order to determine the effect that the crystalline orientation of the NiO antiferromagnetic layer has on the magnetization curve of the NiFe ferromagnetic layer. Simple models predict no exchange anisotropy for the (001)-oriented surface, which in its bulk termination is magnetically com...

Journal: :Applied optics 2009
B Sassolas R Flaminio J Franc C Michel J-L Montorio N Morgado L Pinard

We discuss a method to control the coating thickness deposited onto large and strongly curved optics by ion beam sputtering. The technique uses an original design of the mask used to screen part of the sputtered materials. A first multielement mask is calculated from the measured two-dimensional coating thickness distribution. Then, by means of an iterative process, the final mask is designed. ...

Journal: :Physical review. E, Statistical, nonlinear, and soft matter physics 2006
Javier Muñoz-García Rodolfo Cuerno Mario Castro

A local evolution equation for one-dimensional interfaces is derived in the context of erosion by ion beam sputtering. We present numerical simulations of this equation which show interrupted coarsening in which an ordered cell pattern develops with constant wavelength and amplitude at intermediate distances, while the profile is disordered and rough at larger distances. Moreover, for a wide ra...

2014
A. N. Chaika N. N. Orlova V. N. Semenov E. Yu. Postnova S. A. Krasnikov M. G. Lazarev S. V. Chekmazov V. Yu. Aristov V. G. Glebovsky S. I. Bozhko I. V. Shvets

The structure of the [001]-oriented single crystalline tungsten probes sharpened in ultra-high vacuum using electron beam heating and ion sputtering has been studied using scanning and transmission electron microscopy. The electron microscopy data prove reproducible fabrication of the single-apex tips with nanoscale pyramids grained by the {011} planes at the apexes. These sharp, [001]-oriented...

Journal: :Applied optics 2000
J Ferré-Borrull A Duparré E Quesnel

Scattering characteristics of multilayer fluoride coatings for 193 nm deposited by ion beam sputtering and the related interfacial roughnesses are investigated. Quarter- and half-wave stacks of MgF(2) and LaF(3) with increasing thickness are deposited onto CaF(2) and fused silica and are systematically characterized. Roughness measurements carried out by atomic force microscopy reveal the evolu...

2000
W. Mayer

In high-dose ion implantation for materials modification, the maximum concentration of the implanted species is determined by ion-induced erosion (sputtering) of the implanted layer. In this review, we consider the influence of preferential sputtering and atomic mixing. The maximum concentration of the implanted species is given roughly by r IS and extends over a depth W where S is the sputteri...

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