In this paper a modified junctionless transistor is proposed. The aim of the novel structure controlling off-current using π-shape silicon window in buried oxide under source and channel regions. changes potential profile region which conduction band energy get away from body Fermi rebuild an electrostatic potential. Beside significant reduced off-current, on current has acceptable value Silico...

In the last few years the downscaling of MOSFETs has caused problems due to the increasing short-channel effects (SCEs) in the sub 22 nm technology. The conventional MOS transistor has its physical limits due to the drift-diffusion current transport mechanism resulting in a minimal subthresholdslope of 60 . To fall below this physical limit a new device technology with an alternative carrier tr...

We introduce a new transistor architecture based on inter-band tunneling mechanism as a step towards exploring steep switching transistors for energy efficient logic applications. While there have been reports on tunnel transistors in Si, Ge material system and their alloys, we focus specifically on narrow gap compound semiconductor (CS) systems to develop tunnel transistors. We address the fol...

abstract: this paper is the first study on the impact of ambient temperature on the electrical characteristics and high frequency performances of double gate armchair graphene nanoribbon field effect transistor (gnrfet). the results illustrate that the gnrfet under high temperature (ht-gnrfet) has the highest cut-off frequency, lowest sub-threshold swing, lowest intrinsic delay and power delay ...