Image sensors are the core components of computer, communication, and consumer electronic products. Complementary metal oxide semiconductor (CMOS) image sensors have become the mainstay of image-sensing developments, but are prone to leakage current. In this study, we simulate the CMOS image sensor (CIS) film stacking process by finite element analysis. To elucidate the relationship between the...

Substantial increase in gate and sub-threshold leakage of complementary metal-oxide-semiconductor (CMOS) devices is making it extremely challenging to achieve energy-efficient designs while continuing their scaling at the same pace as in the past few decades. Designers constantly sacrifice higher levels of performance to limit the ever-increasing leakage power consumption. One possible solution...

By a Computational Fluid Dynamics software named Fluent, the influence that the permeability, gas emission intensity of goaf and turbulent parameters in working face have on the numerical simulation was studied. The results show that: the permeability and gas emission intensity of goaf have great influence on the migration law of gas and goaf air leakage, causing great impact on the gas concent...

The growing demand for high density VLSI circuits and the exponential dependency of the leakage current on the oxide thickness is becoming a major challenge in deep-submicron CMOS technology. In this work, a novel Static Random Access Memory (SRAM) Cell is proposed targeting to reduce the overall power requirements, i.e., dynamic and standby power in the existing dual-bit-line architecture. The...

We demonstrate the applicability of fully threedimensional device simulation with the investigation of tunneling currents through oxides and show its benefit for the understanding of physical phenomena especially in the nanometre regime. We compare leakage current measurements from three oxides with different thicknesses (7 nm, 15 nm, and 50nm), measured by an atomic force microscope (AFM), wit...

A SRAM cell must meet requirements for operation in submicron/nano ranges. The scaling of CMOS technology has significant impact on SRAM cell -random fluctuation of electrical characteristics and substantial leakage current. In this paper we present dynamic column based power supply 8T SRAM cell and comparing the proposed SRAM cell with respect to conventional SRAM 6T in various aspects. To ver...

This paper expounds the 3D modelling of the MFL imaging system to monitoring the outer surface defects in Ferromagnetic Steam Generator Tube (SGT). It features a new flaw detection technique in conjunction with the Magnetic Flux Leakage (MFL) inspection and Digital Imaging. It delivers information of the defective tube surface in the form of a digital image. The impact of variation in the dimen...

In this paper the performance of 8-transistor based Full adder is analyzed, evaluated, and compared with that of three different types of Full Adders based on Complementary Pass Transistor XOR Logic gate. Simulation results using nano-scale SPICE parameters are obtained for the above mentioned FAs. It is shown that the performance of the 8-transistor based Full adder in term of power dissipatio...

A power-gating scheme was presented to support multiple power-off modes and reduce the leakage power during short periods of inactivity. However, this scheme can suffer from high sensitivity to process variations, which impedes manufacturability. Recently the multi-mode power-gating technique that is tolerant to process variations and scalable to more than two intermediate power-off modes. In t...

An overview of performance analysis and comparison between various parameters of a low power high speed 10T full adder has been presented here. This paper shows comparative study of advancement over active power, leakage current and delay with power supply of (0.7v) .We have achieved reduction in active power consumption of 39.20 nW and propagation delay of 10.51 ns, which makes this circuit hi...