Silicon nitride waveguides have emerged as an excellent platform for photonic applications, including nonlinear optical signal processing, owing to their relatively high Kerr nonlinearity, negligible two photon absorption, and wide transparent bandwidth. In this paper, we propose effective approach using 3D finite element method optimize the dispersion characteristics of silicon four-wave mixin...

A systematic investigation of the influence of the process parameters temperature, pressure, total gas flow, and SiH2Cl2 :NH3 gas flow ratio on the residual stress, the refractive index, and its nonuniformity across a wafer, the growth rate, the film thickness nonuniformity across a wafer, and the Si/N incorporation ratio of low pressure chemical vapor deposition SixNy films has been performed....

In this work, we prepared ultra-long Si-doped β-Ga2O3 nanowires on annealed Al2O3-film/Si substrate by low-pressure chemical vapor deposition (LPCVD) assisted Au as catalyst. The length of exceeds 300 μm and diameters range from ~30 to ~100 nm in one-dimensional structures. show good crystal quality exhibit (201) orientation, confirmed transmission electron microscopy X-ray diffraction analysis...

Large specific surface area nanostructures are desirable in a wide range of sensing applications due to their longer light-trapping path and increased absorption. Engineering the nanotree structure which possesses high branch density turned out be challenging from experimental point view, certainly not adequately explored. This paper shows how design substrates with silicon for surface-enhanced...

Semi-Insulating Polycrystalline Silicon (SIPOS) films were deposited on Si02/Si, Si, and sapphire substrates by the chemical vapor deposition of silane and nitroiJs oxide at atmospheric and low pressures. X-ray diffraction was used to identify the phases present, and to study structural properties like grain size and strain as a function of the flow rate ratio, ~, = [N20]/[SiH4].oBoth APCVD and...