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a complete procedure for the design of w-band low noise amplifier in mmic technology is presented. the design is based on a simultaneously power and noise matched technique. for implementing the method, scalable bilateral transistor model parameters should be first extracted. the model is also used for transmission line utilized in the amplifier circuit. in the presented method, input/output ma...

In this article a low power and low latency 4-2 compressor has been presented. By using modified truth table and Pass Transistor Logic (PTL) a novel structure has been proposed which outperforms previous designs from the frequency of operation view point. The proposed design method has reduced the total transistor count considerably which will lead to reduced power consumption and smaller activ...

In this paper, we address the epilayer design of the bipolar transistor using the one-dimensional (1-D) mixed-level simulator MAIDS (microwave active integral device simulator). MAIDS facilitates simulation of the electrical behavior of bipolar (hetero) junction transistors with various doping profiles and under different signal conditions in a realistic circuit environment. MAIDS as implemente...

Microwave photoconductivity decay (μ-PCD) method was applied to evaluate the effects of chemical composition and Ar plasma induced damage on the bulk and the surface states in amorphous In-Ga-ZnO (a-IGZO) films. It was found that the peak reflectivity signal in the photoconductivity response increased with decreasing the Ga content, and had a strong correlation with the a-IGZO transistor perfor...

Microwave oscillator design generally represents a complex problem. Depending on the technical requirements of the oscillator, it is necessary to define the configuration of the oscillation system and transistor type, evaluate and measure smalland large-signal parameters of the transistor equivalent circuit and use an appropriate nonlinear simulator to calculate the oscillator electrical and sp...