We have studied the influence of disorder on the Kondo effect in thin films of Cu(Mn), i.e., Cu doped with a small amount of Mn. We find that the Kondo contribution to the resistivity is suppressed when the elastic mean-free-path, λ, is reduced. While this is qualitatively similar to results found previously by our group in a different material, our new experiments reveal in detail how this sup...

Bi1.5Zn1Nb1.5O7 (BZN) epitaxial thin films were grown by pulsed laser deposition on Al2O3 with a double ZnO buffer layer through domain matching epitaxy (DME) mechanism. The pole figure analysis and reciprocal space mapping revealed the single crystalline nature of the thin film. The pole figure analysis also shows a 60 twinning for the (222) oriented crystals. Sharp intense spots in the SAED p...

An electrically pumped ZnO homojunction random laser diode based on nitrogen-doped p-type ZnO nanowires is reported. Nitrogen-doped ZnO nanowires are grown on a ZnO thin fi lm on a silicon substrate by chemical vapor deposition without using any metal catalyst. The p-type behavior is studied by output characteristics and transfer characteristic of the nanowire back-gated fi eld-effect transisto...

RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The electric conduction mechanism of the AZO and GZO films came mainly from the Al and Ga, the oxygen vacancies, Zn interstitial atoms, and Al and/or Ga interstitial atoms. AZO and GZO films achieved higher conduction than...

A heterostructure device consisting of nitrogendoped Mg0.12Zn0.88O and gallium-doped ZnO thin films was grown on c-plane sapphire substrate using RF plasmaassisted molecular beam epitaxy. Current–voltage and photocurrent characteristics indicate the formation of a p–n junction. Random lasing behavior with lasing modes centered at 356 nm was observed. A low-threshold current of 6 mA was determin...

In order to combine advantages of ZnO thin film transistors (TFTs) with a high on-off ratio and graphene TFTs with extremely high carrier mobility, we present a facile methodology for fabricating ZnO thin film/graphene hybrid two-dimensional TFTs. Hybrid TFTs exhibited ambipolar behavior, an outstanding electron mobility of 329.7 ± 16.9 cm(2)/V·s, and a high on-off ratio of 10(5). The ambipolar...

ZnO photoanodes for dye sensitized solar cell were sythesized by using sol-gel spin coating method. XRD pattern confirmed that ZnO film was crystalline in nature and crystallite size calculated was 45.8 nm. The grain size measured form SEM image of ZnO film was 66.6 nm. Transmission of thin film was observed 75-92% in wavelength range from 400-800nm. The photon to electron conversion effiecienc...

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