Ultra-wide bandgap semiconductor gallium oxide (Ga2O3) features a breakdown strength of 8 MV/cm and bulk mobility up to 300 cm2V−1s−1, which is considered promising candidate for next-generation power devices. However, its low thermal conductivity reckoned be severe issue in the management high-power The epitaxial integration thin films on silicon carbide (SiC) substrates possible solution tack...

Abstract In this paper, a novel super-junction (SJ) MOSFET with enhanced switching performance and ruggedness is proposed investigated by the method of TCAD simulations. An N + /P - polysilicon junction gate electrode separation layer between P-base P-pillar are introduced to trench SJ-MOSFET. For gate, P located in bottom plays role insulating layer, which efficiently reduces charge (Q G ), th...

We investigated the frequency dependences of Y22 of FDSOI MOSFETs, in which the drain current response delay is observed for the first time. Short channel FD-SOI devices operating in linear region show significant drain current response delay. It is confirmed that FD-SOI MOSFET’s RF behavior can be well reproduced with the proposed model including the drain current response delay.

We propose a CMOS circuit that can be used as an equivalent to resistors. This circuit uses a simple differential pair with diodeconnected MOSFETs and operates as a high-resistance resistor when driven in the subthreshold region of MOSFETs. Its resistance can be controlled in a range of 1–1000 MΩ by adjusting a tail current for the differential pair. The results of device fabrication with a 0.3...

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The layout design to improve uniform ESD current distribution in multi-finger MOSFET devices for better ESD robustness is investigated in a 0.18-μm salicided CMOS process. The multi-finger MOSFET, without adding the pick-up guard ring inserted into its source region, or with the vertical direction of power line connection, can sustain a higher ESD level. The layout of I/O cell can be drawn more...

The synchronous buck circuit is in widespread use to provide “point of use” high current, low voltage power for CPU’s, chipsets, peripherals etc. In the synchronous buck converter, the power stage has a “high-side” (Q1 below) MOSFET to charge the inductor, and a “Low-side” MOSFET which replaces a conventional buck regulator’s “catch diode” to provide a low-loss recirculation path for the induct...

This paper shows how the full compatibility of the ACM model with the quasi-Fermi potential formulation for the drain current allows the derivation of a very simple model of the MOSFET channel. As a result, consistent dc, ac, noise, and mismatch models for all operating modes of the MOSFET are described. Experimental results confirm the accuracy of both mismatch and noise models under various b...

approved: Gabor C. Temes In this thesis, novel design techniques have been proposed for implementing highlinearity SC circuits in a standard digital CMOS process. They use nonlinear MOSFET capacitors instead of linear double-poly capacitors. To reduce their nonlinearities, a bias voltage is applied to keep MOSFET capacitors in their accumulation regions. For further reduction of distortion, two...

The constant pace of CMOS technology scaling has enabled continuous improvement in integrated-circuit cost and functionality, generating a new paradigm shift towards mobile computing. However, as the MOSFET dimensions are scaled below 30nm, electrostatic integrity and device variability become harder to control, degrading circuit performance. In order to overcome these issues, device engineers ...