نتایج جستجو برای: n and gan doped

تعداد نتایج: 16963772  

Journal: :journal of nanostructures 2016
f. azizi f. molani

in order to improve uv and visible lights photocatalytic activities of the pure anatase tio2, a novel and efficient n-doped tio2 photocatalyst was prepared by sol-gel method. n-doped titania is prepared using triethylamine (with difference molar ratios) as the nitrogen source. the crystalline structure, morphology, particle size, absorbance and band-gap and chemical structure of n-doped tio2 wa...

حمید هراتی‌زاده, , مرتضی اسمعیلی, , پر اولاف هولتز, ,

Internal polarizations field which take place in quantum structures of group-III nitrides have an important consequence on their optical properties. Optical properties of wurtzite AlGaN/GaN quantum well (QW) structures grown by MBE and MOCVD on c-plane sapphire substrates have been investigated by means of photoluminescence (PL) and time resolved photoluminescence (TRPL) at low-temperature. PL ...

Journal: :Nanoscale 2015
Bing Yang Baodan Liu Yujia Wang Hao Zhuang Qingyun Liu Fang Yuan Xin Jiang

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanow...

2014
M. Stachowicz A. Kozanecki C.-G. Ma M. G. Brik J. Y. Lin J. M. Zavada

Much effort has been put to achieve optoelectronic devices based on Er doped GaN, operating on the intra-4f-shell transitions of erbium. The key issue for good understanding of energy transfer mechanisms to Er and its luminescence properties is the position of Er ions in the crystalline lattice of GaN. After doping, Er ions are assumed to be placed in substitutional position for Ga in GaN. Alth...

Journal: :Japanese Journal of Applied Physics 2021

Abstract This article addresses the impact of buffer doping on critical performance issues current-collapse and dynamic R ON in GaN high electron mobility transistors. It focusses effect carbon, either incorporated deliberately GaN-on-Si power switches, or as a background impurity iron doped RF GaN-on-SiC devices. The commonality is that carbon results epitaxial becoming p-type hence electrical...

2006
Clóves G. Rodrigues Áurea R. Vasconcellos Roberto Luzzi

A theoretical study of the mobility of n-doped III-Nitrides in wurtzite phase is reported. We have determined the nonequilibrium thermodynamic state of the bulk n-InN, n-GaN, and n-AlN systems driven far away from equilibrium by a strong electric field in the steady state, which follows after a very fast transient. For this we solve the set of coupled nonlinear integro-differential equations of...

We have performed a density functional theory investigation on the structural and electronic properties of pristine and Nitrogen-doped TiO2 anatase nanoparticles as the adsorbents for removal and degradation of hydrazine molecules in the environment. We have presented the most stable adsorption configurations and examined the interaction of hydrazine molecule with these doped and undoped nanopa...

2015
Jin Fan Lu Ouyang Xinyu Liu Ding Ding Jacek K. Furdyna David J. Smith Yong-Hang Zhang

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We performed a density functional theory investigation on the structural and electronic properties of pristine and nitrogen-doped TiO2/Graphene oxide nanocomposites as the adsorbents for the removal of toxic NO molecules in the environment. We presented the most stable adsorption configurations and examined the interaction of NO molecule with these doped and undoped nanocomposites. It turns out...

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