We demonstrate annealed low-temperature grown ~LTG! GaAs to be a highly effective etch-stop layer while photoetching n-type normal-growth-temperature GaAs. During this process, the etch rate is controlled by the transport of photogenerated carriers to the semiconductor/electrolyte interface. Because of the very short minority carrier lifetime in LTG-GaAs, only a very small portion of photogener...

The photoassisted oxidations of a number of compounds, including hydroquinone, p-aminophenol, I, Br-, C1-, Fez+, Ce3+, and CN-, at polycrystalline Ti02 are demonstrated. Many of these compounds compete for photogenerated holes with the solvent with high current efficiencies. Ethanol, CN-, and ethyl formate are oxidized by a current doubling mechanism. The majority of these compounds can be oxid...

Semiconductor Devices In article 2208698, Janio Venturini, Tom Nilges, and co-workers report on the first position- direction-flexible diode made solely from Ag18Cu3Te11Cl3. A temperature gradient of a few degrees around room is sufficient to switch between p- n-type conduction, controlling existence, position, current flow direction in device.

A novel dipolar-modulated charge-doped trilayer n-n organic heterojunction with a bidirectional tunable energy band discontinuity is constructed. The rectifying mechanism of the trilayer is similar to the rectifying and inverse-rectifying characteristics from n-p and p-n junctions, respectively. Zero-bias optoelectronic behavior and persistent photoconductivity are discovered. These results sho...

Abstract Organic p–n junctions attract widespread interest in the field of molecular electronics because their unique optoelectronic singularities. Importantly, donor/acceptor character is strongly correlated to degree substitution, e.g., introduction electron‐withdrawing groups. Herein, by gradually increasing peripheral fluorination on planar, D 4h− symmetric iron(II) phthalocyanato (FePc) co...

An oxide semiconductor (perovskite-type Mn2 O3 ) is reported which has a narrow and direct bandgap of 0.45 eV and a high Vickers hardness of 15 GPa. All the known materials with similar electronic band structures (e.g., InSb, PbTe, PbSe, PbS, and InAs) play crucial roles in the semiconductor industry. The perovskite-type Mn2 O3 described is much stronger than the above semiconductors and may fi...

Strategies for the enhancement of gas sensing properties, and specifically the improvement of gas selectivity of metal oxide semiconductor nanowire (NW) networks grown by chemical vapor deposition and thermal evaporation, are reviewed. Highly crystalline NWs grown by vapor-phase routes have various advantages, and thus have been applied in the field of gas sensors over the years. In particular,...

Tin monosulfide (SnS) is a naturally p-type semiconductor with a layered crystal structure, but no reliable n-type SnS has been obtained by conventional aliovalent ion substitution. In this work, carrier polarity conversion to n-type was achieved by isovalent ion substitution for polycrystalline SnS thin films on glass substrates. Substituting Pb(2+) for Sn(2+) converted the majority carrier fr...