نتایج جستجو برای: nanocrystallites oxide

تعداد نتایج: 176640  

2008
D. Mohanta S. S. Narayanan S. K. Pal A. K. Raychaudhuri

We report on the production of composite semiconductor CdZnS nanoparticles by adopting an inverse micellar route, using bis (2-ethylhexyl) sulfosuccinate (aerosol-AOT) as surfactant and with a degree of hydration w0 = [H2O] : [AOT] = 8.9. Prior to bioconjugation (conjugation with bovine serum albumin (BSA)), the hydrophobic surface of the nanocrystals were made hydrophilic with thiol treatment ...

Journal: :Fizika tverdogo tela 2022

The temperature dependences of the dielectric spectra Ag 2 S nanocrystallites synthesized inside channels nanoporous glasses NPG-17 with an average diameter filamentous pores 17 nm are studied. macroscopic mechanism for occurrence frequency dependence electrical response a structure + is proposed. Formation model based superionic phase transition in fixed glass discussed. Keywords: silver sulfi...

Journal: :Microelectronics Journal 2005
A. Vivas Hernandez T. V. Torchynska Y. Matsumoto S. Jiménez Sandoval M. Dybiec S. Ostapenko L. V. Shcherbina

Paper presents the comparative investigation of photoluminescence and Raman scattering spectra of pure amorphous silicon films and amorphous silicon films with different size Si nanocrystallites. Several PL bands in the IR spectral range with maxima at 0.90, 0.98, 1.14 and 1.36 eV have been revealed in studied samples. The 0.90–0.98 eV PL bands are attributed to the band tail luminescence in Si...

2006
Da-Jun Shu Da-Wei Li Wei Pan Hong-Min Li Ru-Wen Peng Mu Wang

A general theory of heteroepitaxial lateral growth of nanocrystallites via successive nucleation at the concave corner of the nanocrystallite and the substrate was developed. The theory treats the existence of a rotational instability of crystallographic orientation induced by the imbalance of surface/interface energy. From the theory it can be concluded that the crystallographic orientation ma...

2012
Tae-Youb Kim Chul Huh Nae-Man Park Cheol-Jong Choi Maki Suemitsu

Silicon nanocrystals (Si-NCs) were grown in situ in carbide-based film using a plasma-enhanced chemical vapor deposition method. High-resolution transmission electron microscopy indicates that these nanocrystallites were embedded in an amorphous silicon carbide-based matrix. Electron diffraction pattern analyses revealed that the crystallites have a hexagonal-wurtzite silicon phase structure. T...

2000
Yoshiyuki Kurokawa Shintaro Nomura Tadashi Takemori Yoshinobu Aoyagi

We report the state of progress in the application of the real-time real-space higher-order finite-difference method which is effective in computing electronic properties of large quantum systems. With the use of empirical pseudopotentials, the effectiveness of the method has been demonstrated in the calculation of absorption spectra of such realistic systems as hydrogenated silicon nanocrystal...

2003
A. Biswas G. S. Maciel C. S. Friend P. N. Prasad

Transparent 0.1ErF3–0.1YbF3–5LaF3–94.8SiO2 (mol%) glass-ceramics was prepared by sol–gel method. Efficient upconversion emissions at 379, 407, 450, 490, 520, 540 and 660 nm were observed under 973 nm excitation. The signal at 379 nm is only 4.5 times weaker than the signal at 520 nm, that is readily visible by the naked eyes even with a pump power of 27 mW, indicating that this sample is a very...

Journal: :AIP Advances 2023

Polycrystalline thin films of Bi 2 Te 3 , a well-known topological insulator (TI), grown by RF sputtering shows metallic-like transport for wide range temperatures, T = 50 K to 225 K. For > K, the sample activated transport.. The behavior at low temperatures can be understood within model overlapping surface states TI nanocrystallites in film, suggesting that polycrystalline nature may also ...

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