This paper reviews silicon implementations of threshold logic gates, covering several decades. It details numerous VLSI implementations including: capacitive (switched capacitor and floating gate with their variations), conductance/current (pseudo-nMOS, output-wired-inverters, and a plethora of solutions evolved from them), as well as many differential solutions. Nanoelectronic implementations ...

In industrial environments, numerical simulation has become an indispensable tool for the development and optimization of especially front-end processes. In order to remain useful for future technology nodes, process simulation has to follow and partly even anticipate paradigm shifts of state-of-the-art processes and new materials for future nanoelectronic devices. Within this article, the auth...

Recently, horizontal nanowires (NWs) have attracted much attention due to their increased compatibility with NW-based integrated nanoelectronic and nanophotonic systems. However, it still remains challenging to synthesize horizontal NWs efficiently. Here we introduce a novel method towards controllable growth of horizontal GaN NWs using HVPE with an Au/Ni thin film as the catalyst. By simply fl...

Engineering programs that have introduced nanotechnology into their curriculum typically add material into core classes or have added a separate set of nanotechnology courses. Increasing the number of courses can be a challenge for colleges with limited resources and faculty and it is not easy to make significant changes to the curriculum all in one step. This paper looks at an alternative that...

An advanced, multi-dimensional, and massively parallel simulation approach based on quantum mechanical concepts is introduced and its numerical algorithms briefly summarized. It has been implemented in a computer aided design tool called OMEN, specifically dedicated to next generation nanoelectronic devices. OMEN can treat electron, hole, and phonon (thermal) transport in realistically sized ul...

The Breit-Wigner resonance formula is used to model a class of molecular electronic devices, in order to establish an abstract model for exploration of their applicability in future nanoelectronic systems. The model is used to characterize molecular device I-V curves in terms of the coupling between the molecule and the leads, and demonstrate digital circuit functionality. Circuit metrics such ...

Neural networks are intended to be used in future nanoelectronic systems since neural architectures seem to be robust against malfunctioning elements and noise in their weights. In this paper we analyze the fault-tolerance of Radial Basis Function networks to StuckAt-Faults at the trained weights and at the output of neurons. Moreover, we determine upper bounds on the mean square error arising ...

SnO2nanowire arrays were synthesized by fast heating a mixture of SnO2and the carbon nanotubes waste soot by high-frequency induction heating. The resultant SnO2nanowires possess diameters from 50 to 100 nm and lengths up to tens of mircrometers. The field-effect transistors based on single SnO2nanowire exhibit that as-synthesized nanowires have better transistor performance in terms of transco...

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Much research is currently being carried out in the field of nanoelectronic circuit design [1], [2]. One of the proposed quantum devices is the Single Electron Tunneling (SET) device. This SET device consists of a tunnel junction, through which only an integer number of electrons can tunnel. A new local tunnel condition will be derived in this paper. The derivation is based on the discrete char...