The formation of tapered self-catalyzed nanowires grown on reflecting substrates is studied theoretically. Within the model, nanowire radius may be obtained as a function length. model describes morphology nanowires. We study influence different growth parameters, including III/V flux ratio and pitch, morphology. Keywords: III-V nanowires, morphology, self-focusing effect, modeling

The magnetoresistance of a one-dimensional electron gas in a metallic ferromagnetic nanowire containing two atomic-size domain walls has been investigated in the presence of spin-orbit interaction. The magnetoresistance is calculated in the ballistic regime, within the Landauer-Büttiker formalism. It has been demonstrated that the conductance of a magnetic nanowire with double domain walls...

Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length...

We demonstrate in-situ Raman measurements of individual silicon nanowires (100 nm diameter, 10-20 m in length) which are trapped using optoelectronic tweezers (OET). OCIS codes: (300.0300) Spectroscopy, Raman; (140.7010) Trapping. Optoelectronic tweezers (OET) is a dynamic, non-invasive optical manipulation tool that works based on the principle of light-induced dielectrophoretic force. It is c...

Recent investigations of semiconductor nanowires have provided strong evidence for enhanced light absorption, which has been attributed to nanowire structures functioning as optical cavities. Precise synthetic control of nanowire parameters including chemical composition and morphology has also led to dramatic modulation of absorption properties. Here we report finite-difference time-domain (FD...

Planar MOS devices miniaturization becomes quite challenging for transistors with reduced channel length due to the loss of gate control over the channel charges. As an alternative, multi-gate devices have been developed due to the better electrostatic control of the charges, which leads to a reduction of the short-channel effects [1-6]. However, for devices with extremely reduced channel lengt...

the presence of van der waals (vdw) force can lead to mechanical instability in freestanding nano-scale actuators. most of the previous researches in this area have exclusively focused on modeling the instability in actuators with one actuating components. while, less attention has been paid to actuators consist of two actuating components. herein, the effect of the vdw force on the instability...