In this paper a demonstrator oscillator circuit integrated in a MCM-D on glass technology is presented. The active device of the oscillator is a thin-film Ge (germanium) -based MHEMT. The MHEMT is embedded in the bottom dielectric layer of the MCM-D. The combination of passive MCM-D technology and MHEMTs on Ge allows for efficient semi-monolithic integration of active devices and realisation of...

Responsive PMO materials have been synthesized through co-assembly of bridged diacetylenic silsesquioxane and surfactant. The spatially defined polydiacetylenic component, mesoporous network, and the covalent proximity of polydiacetylene to silica endow the PMO with mechanical robustness, reversible chromatic responses, improved thermal stability, and faster responses to chemical stimuli. This ...

A selective dry process is used to fabricate epitaxial diaphragms by etching anisotropic cavities through a GaAs substrate to an AIGaAs stop-etch layer. Active devices are built directly on the layers comprising the diaphragm. The etching process follows the device fabrication sequence facilitating integration of these structures with pre-existing electronic circuitry. Potentiai applications in...

An optoelectronic tweezing (OET) device, within an integrated microfluidic channel, is used to precisely select single cells for lysis among dense populations. Cells to be lysed are exposed to higher electrical fields than their neighbours by illuminating a photoconductive film underneath them. Using beam spot sizes as low as 2.5 μm, 100% lysis efficiency is reached in <1 min allowing the targe...

Keun-Young Park, Geun-Woo Kim, Yong-Jun Seo, Si-Nae Heo, Hang Ju Ko, Sung-Hun Lee, Tae Kwon Song and Bon Heun Koo* School of Nano & Advanced Materials Engineering, Changwon National University, Chang Won, Korea Photovoltaic and Optoelectronic device center, Korea Photonics Technology Institute (KOPTI), Gwangju, Korea Department of Material Processing, Advanced Thin Film Research Group, Korea In...

We report on a new optofluidic platform that combines optoelectronic tweezers (OET) 1 with patterned growth patches coated with extracellular matrix for long-term culture of individual adherent cells. The current device has a 10x10 array of growth patches, each with 0.5mm diameter to allow for expansion of colonies to about 250 cells. The OET platform allows selection of desired single cells be...

Influence of temperature on photoconductivity of single Se nanowires has been studied. Time response of photocurrent at both room temperature and low temperature suggests that the trap states play an important role in the photoelectrical process. Further investigations about light intensity dependence on photocurrent at different temperatures reveal that the trap states significantly affect the...

The photocurrent was performed in the Sb2SeTe2 topological insulator at a wavelength of 532 nm. It exhibits extremely high performance that the responsivity and the photoconductive gain reach 2293 AW-1 and 5344 at 1 V. This high photoresponse is orders of magnitude higher than most reported values in topological insulators and two-dimensional transitional metal dichalcogenides. This finding sug...

We demonstrate a graphene-based electro-absorption modulator achieving extraordinary control of terahertz reflectance. By concentrating the electric field intensity in an active layer of graphene, an extraordinary modulation depth of 64% is achieved while simultaneously exhibiting low insertion loss (∼2 dB), which is remarkable since the active region of the device is atomically thin. This modu...

Organic-inorganic lead halide perovskites are distinct from most other semiconductors because they exhibit characteristics of both electronic and ionic motion. Accurate understanding of the optoelectronic impact of such properties is important to fully optimize devices and be aware of any limitations of perovskite solar cells and broader optoelectronic devices. Here we use a numerical drift-dif...