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It has been more than four years since the discovery of β-FeSe1-x superconductors. Through the efforts of many outstanding research groups, unprecedented advances in the field have been achieved. High-quality single crystals of β-FeSe1-x and related compounds have been prepared by various techniques, allowing us to explore in detail the physical properties of this class of materials. Detailed c...
Mixing of plastic ablator material, doped with Cu and Ge dopants, deep into the hot spot of ignition-scale inertial confinement fusion implosions by hydrodynamic instabilities is diagnosed with x-ray spectroscopy on the National Ignition Facility. The amount of hot-spot mix mass is determined from the absolute brightness of the emergent Cu and Ge K-shell emission. The Cu and Ge dopants placed a...
Gaining insight into the nature and consequences of people's global self-evaluations (i.e., their self-esteem) has been fraught with difficulty. Nearly 2 decades ago, researchers suggested that such difficulties might be addressed by the development of a new class of measures designed to uncover implicit self-esteem. In this article, we evaluate the construct validity of the 2 most common measu...
Appropriately controlling the properties of the Si shell in Ge/Si core/shell nanowires permits not only passivation of the Ge surface states, but also introduces new interface phenomena, thereby enabling novel nanoelectronics concepts. Here, we report a rational synthesis of Ge/Si core/shell nanowires with doped Si shells. We demonstrate that the morphology and thickness of Si shells can be con...
Open-framework chalcogenides are potential electrode materials for sodium-ion batteries (SIBs) due to their architectures with fast-ion conductivity. Herein, we report on the successful synthesis of open-framework Cu-Ge-based chalcogenides [Cu8Ge6Se19](C5H12N)6 (CGSe) and the research of their energy storage application as SIB anodes for the first time. As a result, the CGSe anode exhibited goo...
We report measurements of the valence band width in compressed Ge determined from x-ray emission spectra below the Ge K edge. The width of the valence band does not show any pressure dependence in the semiconducting diamond-type structure of Ge below 10 GPa. On the other hand, in the metallic beta-Sn phase above 10 GPa the valence band width increases under compression. Density-functional calcu...
Using Fourier transform infrared-attenuated total reflectance spectroscopy in conjunction with hydrogen adsorption to probe surface layer composition, we observe a reversible place exchange between Ge and Si on Ge-covered Si(001) when the surface is dosed with atomic H at elevated temperatures. First-principles calculations confirm a thermodynamic driving force for this place exchange. To expla...
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