نتایج جستجو برای: pecvd reactor

تعداد نتایج: 30231  

2011
William Kerr

Reactor control and safety systems are discussed with emphasis on safety considerations. Consideration is given to the importance of reactor characteristics, control and safety system characteristics, the operational program of the reactor, and credible accidents, in a determination of safety of operation. Ecperience with research reactor control and safety systems has led to the development of...

2003
M. W. Denhoff

This paper addresses a relatively simple method of measuring Young’s modulus and residual stress in microelectromechanical systems (MEMS) type structures. A surface profilometer is used to measure the deflection of thin film fixed-fixed beams due to the force applied by the profilometer probe. These measurements are analyzed using analytical beam theory. The treatment of end effects and the acc...

2012
Seunghun Lee Jong-Kuk Kim

Roll-to-roll (RTR) process requires a linear surface treatment source in various processes such as pre-treatment, etching, and deposition. For high speed and large width processes the linear source should have superior characteristics that can be applied to 100~300 m/mim process and large width treatment up to 2 m. Several linear surface treatment sources have been proposed to the RTR process. ...

2013
Yu-Shun Chiu Chin-Lung Cheng Thou-Jen Whang Chi-Cheng Chen

Continuous cost reduction of silicon-based solar cells is needed to lower the process time and increase efficiency. To achieve lower costs, screen-printed texture-barrier (SPTB) paste was first developed for single-side texturization (ST) of the interdigitated back-contact (IBC) for silicon-based solar cell applications. The SPTB paste was screen-printed on silicon substrates. The SPTB paste wa...

Journal: :Nanoscale 2015
S Cosentino A M Mio E G Barbagiovanni R Raciti R Bahariqushchi M Miritello G Nicotra A Aydinli C Spinella A Terrasi S Mirabella

Quantum confinement (QC) typically assumes a sharp interface between a nanostructure and its environment, leading to an abrupt change in the potential for confined electrons and holes. When the interface is not ideally sharp and clean, significant deviations from the QC rule appear and other parameters beyond the nanostructure size play a considerable role. In this work we elucidate the role of...

2001
M. A. Guillorn M. L. Simpson G. J. Bordonaro V. I. Merkulov D. H. Lowndes

Vertically aligned carbon nanofibers ~VACNFs! are extremely promising cathode materials for microfabricated field emission devices, due to their low threshold field to initiate electron emission, inherent stability, and ruggedness, and relative ease of fabrication at moderate growth temperatures. We report on a process for fabricating gated cathode structures that uses a single in situ grown ca...

2013
Hideharu Shimizu Shuji Nagano Akira Uedono Nobuo Tajima Takeshi Momose Yukihiro Shimogaki

Cap layers for Cu interconnects in ultra-large-scale integrated devices (ULSIs), with a low dielectric constant (k-value) and strong barrier properties against Cu and moisture diffusion, are required for the future further scaling of ULSIs. There is a trade-off, however, between reducing the k-value and maintaining strong barrier properties. Using quantum mechanical simulations and other theore...

Journal: :Microelectronics Reliability 2012
Robert Mroczynski Romuald B. Beck

In this study, we present selected reliability issues of double gate dielectric stacks for non-volatile semiconductor memory (NVSM) applications. Fabricated gate structures were consisted of PECVD silicon oxynitride layer (SiOxNy) as the pedestal layer and hafnium dioxide layer (HfO2) as the top gate dielectric. In the course of this work, obtained MIS structures were investigated by means of c...

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