نتایج جستجو برای: photoluminescence
تعداد نتایج: 11123 فیلتر نتایج به سال:
We investigated the linearly polarized emission of uniformly aligned poly(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thia-diazol-4,8-diyl) (F8BT) with a liquid crystalline phase on a rubbed alignment layer. The polarization ratio, defined by the ratio of luminous intensities polarized parallel and perpendicular to the rubbed direction, gradually decreased with increasing thickness of th...
Raman and photoluminescence (PL) spectroscopy are used to investigate dynamic structure-function relationships in methylammonium lead iodide (MAPbI3) perovskite. The intensity of the 150 cm-1 methylammonium (MA) librational Raman mode is found to be correlated with PL intensities in microstructures of MAPbI3. Because of the strong hydrogen bond between hydrogens in MA and iodine in the PbI6 per...
Emission characteristics of metal halide perovskites play a key role in the current widespread investigations into their potential uses in optoelectronics and photonics. However, a fundamental understanding of the molecular origin of the unusual blueshift of the bandgap and dual emission in perovskites is still lacking. In this direction, we investigated the extraordinary photoluminescence beha...
A simplified system for measuring time-resolved photoluminescence (PL) induced by UV laser pulses (lambda = 337 nm) is designed by a combination of a commercial PL reader and a digital oscilloscope. Using this system, PL emissions after pulsed UV excitation from a chip of sapphire (Al2O3) are successfully measured with intervals of 10 ns. It is thus expected that this system will be convenientl...
Strong suppression of the effects caused by the internal electric field in ZnO/ZnMgO quantum wells following ion-implantation and rapid thermal annealing, is revealed by photoluminescence, time-resolved photoluminescence, and band structure calculations. The implantation and annealing induces Zn/Mg intermixing, resulting in graded quantum well interfaces. This reduces the quantum-confined Stark...
Photoluminescence and excitation of the photoluminescence spectroscopy has been performed in single InGaAs self-assembled quantum rings embedded in a field effect structure device. To determine their electronic structure, bias-dependent optical transitions have been analyzed both, for individual quantum rings, and for the averaged ensemble. Our results are compared with a theoretical model, and...
The differential sensing of tyrosine and serine is achieved with well-aligned CdS nanowire arrays by exploring the pH-dependent photoluminescence behavior of the nanowire arrays toward exposure to the two amino acid solutions. The contrasting trend in photoluminescence (PL) intensity with respect to variations in analyte concentration observed at pH 11 served as the check point for the present ...
In this work, investigations on gallium indium nitride (GaInN) quantum well structures as optochemical transducers in biosensing are presented. In contrast to the conventional electrical read-out of III-nitride-based sensors, a purely optical photoluminescence read-out is performed. Particularly, optical investigations of the iron-storage molecule ferritin deposited on GaInN quantum wells are p...
Thin Nd-doped potassium gadolinium tungstate @KGW or KGd~WO4!2# films are grown by pulsed laser deposition by ablation of a stoichiometric monocrystal target. Rutherford backscattering, x-ray diffraction, atomic force microscopy, and waveguide propagation analyses are performed. The as-grown films are optically active, as evidenced by the photoluminescence spectra centered at 1.068 mm. In some ...
The exciton recombination processes in a series of elastically strained GaAsBi epilayers are investigated by means of time-integrated and time-resolved photoluminescence at T = 10 K. The bismuth content in the samples was adjusted from 1.16% to 3.83%, as confirmed by high-resolution X-ray diffraction (HR-XRD). The results are well interpreted by carrier trapping and recombination mechanisms inv...
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