Obtaining tunable photoluminescence (PL) with improved emission properties is crucial for successfully implementing fluorescent carbon nanodots (fCDs) in all practical applications such as multicolour imaging and multiplexed detection by a single excitation wavelength. In this study, we report a facile hydrothermal approach to adjust the PL peaks of fCDs from blue, green to orange by controllin...

Optical characterization of DNA-wrapped CoMoCAT carbon nanotube hybrids (DNA–CNT) and semiconductor-enriched DNA–CNT was carried out using resonant Raman spectroscopy (RRS) and photoluminescence (PL) experiments. The values of radial breathing modes frequency xRBM were found to be relatively insensitive to the type of wrapping agents surrounding the nanotube. The values of xRBM and the first an...

The laser-induced chemical etching mechanism of Cr–O doped GaAs (1 0 0) substrate in 40% HF-H2O solution is explained by the generation of e–h pairs through defect states in the presence of sub-bandgap photon illumination by using a Nd:YAG Laser (λ ∼ 1.06 m). The central feature of the laser etching technique is pits initiation by surface defects. The etched GaAs samples are characterised by ph...

Magneto-optical and time-resolved photoluminescence (PL) spectroscopies are employed to evaluate electronic structure of a bound exciton (BX) responsible for the 3.364 eV line (labeled as I1) in bulk ZnO. From timeresolved PL spectroscopy, I1 is concluded to originate from the exciton ground state. Based on performed magneto-PL studies, the g-factors of the involved electron and hole are determ...

SiO2 films with Ge 1 implantation at an energy of 60 keV and a dose of 1310 cm, followed by annealing at different temperature, exhibit a broad infrared photoluminescence ~PL! at room temperature under an excitation of the 514.5 nm line of Ar laser. With increasing the annealing temperature, the intensity of the infrared PL band decreases, its full width at half maximum increases, and its energ...

The trivalent Eu(III) ion exhibits unique red luminescence and plays an significant role in the display industry. Herein, amperometry electrodeposition method was employed to electrodeposit materials on porous Si terpyridine-functionalized surfaces. electrodeposited were fully characterized by scanning electron microscopy, X-ray diffraction crystallography, Fourier-transform infrared spectrosco...

We have been successful in adapting Fourier transform (FT) Raman accessories and spectrophotometers for sensitive measurements of the photoluminescence (PL) spectra of photovoltaic materials and devices. In many cases, the sensitivity of the FT technique allows rapid room-temperature measurements of weak luminescence spectra that cannot be observed using dispersive PL spectrophotometers. We pre...

The dependence of interface roughness of pseudomorphic AlAs/In0.53Ga0.47As/InAs resonant tunneling diodes [RTDs] grown by molecular beam epitaxy on interruption time was studied by current-voltage [I-V] characteristics, photoluminescence [PL] spectroscopy, and transmission electron microscopy [TEM]. We have observed that a splitting in the quantum-well PL due to island formation in the quantum ...

Si/Si0.66Ge0.34 coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHVCVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), crosssectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL p...

Time-resolved photoluminescence (PL) and transient absorption (TA) spectroscopy are conducted in order to get knowledge on the excited state of CdSe nanorods (NR), and to assess the impact of Au nanoparticles (NP) on the carrier dynamics of hybrid Au-CdSe NRs. The decay dynamics measured in solution show an increase of non-radiative decay channels in the presence of Au NPs, whose characteristic...